دنبال کردن
Axel Hoffmann
Axel Hoffmann
Institute of Solid State Physics, Technical University of Berlin
ایمیل تأیید شده در tu-berlin.de - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
Bound exciton and donor–acceptor pair recombinations in ZnO‏
BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...‏
physica status solidi (b) 241 (2), 231-260, 2004‏
20142004
Zinc Oxide: From Fundamental Properties Towards Novel Applications‏
CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts‏
Springer, 2010‏
7802010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots‏
R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ...‏
Physical Review B 56 (16), 10435, 1997‏
6361997
Group III nitride semiconductor compounds: physics and applications‏
Clarendon Press, 1998‏
567*1998
Nitrogen-related local vibrational modes in ZnO: N‏
A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ...‏
Applied Physics Letters 80 (11), 1909-1911, 2002‏
5582002
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure‏
H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ...‏
Applied physics letters 80 (2), 210-212, 2002‏
3962002
Zone-boundary phonons in hexagonal and cubic GaN‏
H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ...‏
Physical Review B 55 (11), 7000, 1997‏
3941997
Development of advanced high heat flux and plasma-facing materials‏
C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ...‏
Nuclear Fusion 57 (9), 092007, 2017‏
3332017
Properties of the yellow luminescence in undoped GaN epitaxial layers‏
DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ...‏
Phys. Rev. B 72 (23), 16702, 1995‏
3271995
Excited states and energy relaxation in stacked InAs/GaAs quantum dots‏
R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ...‏
Physical Review B 57 (15), 9050, 1998‏
3211998
Exciton fine structure in undoped GaN epitaxial films‏
D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ...‏
Physical Review B 53 (24), 16543, 1996‏
2511996
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers‏
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...‏
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011‏
2502011
High Si and Ge n-type doping of GaN doping-Limits and impact on stress‏
S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ...‏
Applied Physics Letters 100 (12), 2012‏
2402012
Semiconductor nanostructures‏
D Bimberg‏
Springer, 2008‏
2372008
Free excitons in wurtzite GaN‏
AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ...‏
Physical Review B 64 (11), 115204, 2001‏
2242001
Existence of a phonon bottleneck for excitons in quantum dots‏
R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg‏
Physical review b 64 (24), 241305, 2001‏
2142001
Interrelation of structural and electronic properties in quantum dots using an eight-band model‏
M Winkelnkemper, A Schliwa, D Bimberg‏
Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006‏
2032006
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy‏
H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ...‏
Solid State Communications 96 (12), 943-949, 1995‏
2001995
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix‏
M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ...‏
Applied physics letters 72 (8), 942-944, 1998‏
1971998
Optical properties of the nitrogen acceptor in epitaxial ZnO‏
A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ...‏
physica status solidi (b) 234 (3), R7-R9, 2002‏
1962002
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20