| Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020 | 129 | 2020 |
| Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm A Belmonte, H Oh, S Subhechha, N Rassoul, H Hody, H Dekkers, ... 2021 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2021 | 57 | 2021 |
| A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability B Govoreanu, D Crotti, S Subhechha, L Zhang, YY Chen, S Clima, ... 2015 Symposium on VLSI Technology (VLSI Technology), T132-T133, 2015 | 56 | 2015 |
| First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices S Subhechha, N Rassoul, A Belmonte, R Delhougne, K Banerjee, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 52 | 2021 |
| Understanding and modelling the PBTI reliability of thin-film IGZO transistors A Chasin, J Franco, K Triantopoulos, H Dekkers, N Rassoul, A Belmonte, ... 2021 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2021 | 37 | 2021 |
| Quasi-optical terahertz polarizers enabled by inkjet printing of carbon nanocomposites A Das, TM Schutzius, CM Megaridis, S Subhechha, T Wang, L Liu Applied Physics Letters 101 (24), 2012 | 33 | 2012 |
| A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application J Guo, K Han, S Subhechha, X Duan, Q Chen, D Geng, S Huang, L Xu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2021 | 26 | 2021 |
| Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm S Subhechha, N Rassoul, A Belmonte, H Hody, H Dekkers, MJ van Setten, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 24 | 2022 |
| Lowest IOFF < 3×10−21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT A Belmonte, S Kundu, S Subhechha, A Chasin, N Rassoul, H Dekkers, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 22 | 2023 |
| Extensive reliability investigation of a-VMCO nonfilamentary RRAM: Relaxation, retention and key differences to filamentary switching S Subhechha, B Govoreanu, Y Chen, S Clima, K De Meyer, J Van Houdt, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 6C-2-1-6C-2-5, 2016 | 19 | 2016 |
| Oxygen Defect Stability in Amorphous, C-Axis Aligned, and Spinel IGZO MJ van Setten, HFW Dekkers, L Kljucar, J Mitard, C Pashartis, ... ACS Applied Electronic Materials 3 (9), 4037-4046, 2021 | 17 | 2021 |
| Deposition, Characterization, and Performance of Spinel InGaZnO4 HFW Dekkers, MJ van Setten, A Belmonte, AV Chasin, S Subhechha, ... ACS Applied Electronic Materials 4 (3), 1238-1249, 2022 | 16 | 2022 |
| Kinetic defect distribution approach for modeling the transient, endurance and retention of a-VMCO RRAM S Subhechha, R Degraeve, P Roussel, L Goux, S Clima, K De Meyer, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 5A-5.1-5A-5.6, 2017 | 16 | 2017 |
| Characterizing and modelling of the BTI reliability in IGZO-TFT using light-assisted IV spectroscopy Z Wu, A Chasin, J Franco, S Subhechha, H Dekkers, YV Bhuvaneshwari, ... 2022 International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2022 | 12 | 2022 |
| Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression D Kim, JH Kim, WS Choi, TJ Yang, JT Jang, A Belmonte, N Rassoul, ... Scientific Reports 12 (1), 19380, 2022 | 12 | 2022 |
| Study of contact resistance components in short-channel indium-gallium-zinc-oxide transistor H Tang, H Dekkers, N Rassoul, S Sutar, S Subhechha, V Afanas’ev, ... IEEE Transactions on Electron Devices, 2023 | 11 | 2023 |
| The Impact of IGZO Channel Composition on DRAM Transistor Performance A Kruv, MJ Van Setten, HFW Dekkers, C Lorant, D Verreck, Q Smets, ... IEEE Transactions on Electron Devices, 2023 | 7 | 2023 |
| 2020 IEEE International Electron Devices Meeting (IEDM) A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ... IEEE, 2020 | 7 | 2020 |
| Non-filamentary (VMCO) memory: A two-and three-dimensional study on switching and failure modes U Celano, C Gastaldi, S Subhechha, B Govoreanu, G Donadio, ... 2017 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2017 | 6 | 2017 |
| Modeling of uniform switching RRAM devices and impact of critical defects S Subhechha, R Degraeve, P Roussel, L Goux, S Clima, K De Meyer, ... Microelectronic Engineering 178, 93-97, 2017 | 6 | 2017 |