| SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode X Li, X Tong, AQ Huang, H Tao, K Zhou, Y Jiang, J Jiang, X Deng, X She, ... IEEE Transactions on Electron Devices 65 (1), 347-351, 2017 | 67 | 2017 |
| Design and Characterization of High CS-MCT for Pulse Power Applications W Chen, C Liu, Y Shi, Y Liu, H Tao, C Liu, Q Zhou, Z Li, B Zhang IEEE Transactions on Electron Devices 64 (10), 4206-4212, 2017 | 27 | 2017 |
| Evaluation of CS-MCT in DC solid-state circuit breaker applications W Chen, H Tao, C Liu, Y Xia, Y Shi, Y Liu, C Liu, J Liu, Q Zhou, Z Li, ... IEEE Transactions on Industry Applications 54 (5), 5465-5473, 2018 | 24 | 2018 |
| A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt Characteristics C Liu, W Chen, Y Shi, H Tao, Q Zhou, H Zuo, B Qiao, Y Xia, Z Xiao, W Gao, ... IEEE Transactions on Electron Devices 66 (2), 1018-1025, 2018 | 21 | 2018 |
| Simulation and structure analysis of reconfigurable solid plasma channel based on SPINs Y Zhai, Q Wu, J Tan, H Tao, X Huang, F Gao, J Zhu, Z Zhang, J Du, Y Hou Microelectronic Engineering 145, 49-52, 2015 | 13 | 2015 |
| A high-performance GaN E-mode reverse blocking MISHEMT with MIS field effect drain for bidirectional switch Y Shi, W Chen, C Liu, G Hu, J Liu, X Cui, H Tao, J Zhang, Y Shi, A Zhang, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 9 | 2017 |
| Transient overvoltage induced failure of MOS-controlled thyristor under ultra-high di/dt condition C Liu, W Chen, H Tao, Y Shi, X Tang, W Gao, Q Zhou, Z Li, B Zhang 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 8 | 2017 |
| Application of CS-MCT in DC solid state circuit breaker (SSCB) W Chen, H Tao, C Liu, Y Liu, C Liu, J Liu, Y Shi, Q Zhou, Z Li, B Zhang 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 4 | 2018 |
| Low loss insulated gate bipolar transistor with electron injection (EI-IGBT) W Chen, H Tao, L Lou, C Liu, W Cheng, X Tang, H Liu, Q Zhou, X Deng, ... IEEE Journal of the Electron Devices Society 5 (4), 275-282, 2017 | 4 | 2017 |
| Gate field plate IGBT with trench accumulation layer for extreme injection enhancement X Xu, W Chen, C Liu, N Chen, H Tao, Y Shi, Y Ma, Q Zhou, B Zhang Superlattices and Microstructures 104, 54-62, 2017 | 4 | 2017 |