| Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO3 N Kumar, N Wadehra, R Tomar, S Kumar, Y Singh, S Dattagupta, ... Advanced Quantum Technologies 4 (1), 2000081, 2020 | 50 | 2020 |
| Growth of Highly Crystalline and Large Scale Monolayer MoS2 by CVD: The Role of substrate Position N Kumar, R Tomar, N Wadehra, MM Devi, B Prakash, S Chakraverty Crystal Research and Technology 53 (6), 1800002, 2018 | 38 | 2018 |
| Conducting LaVO3/SrTiO3 Interface: Is Cationic Stoichiometry Mandatory? R Tomar, RM Varma, N Kumar, DD Sarma, D Maryenko, S Chakraverty Advanced Materials Interfaces 7 (6), 1900941, 2020 | 22 | 2020 |
| Investigating the impact of growth temperature on the direct integration of pure phase 2H-MoTe2 with Si (1 1 1) using molecular beam epitaxy K Bhatt, S Kandar, N Kumar, A Kapoor, R Singh Applied Surface Science 659, 159832, 2024 | 11 | 2024 |
| B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr2FeMoO6 Thin Film N Kumar, R Gupta, R Kaur, D Oka, S Kakkar, S Kumar, S Singh, ... ACS Applied Electronic Materials 3 (2), 597-604, 2021 | 7 | 2021 |
| Nanoscale MoSe2 Grown on Si(111) for Potential Applications in Broadband Photodetectors S Kandar, K Bhatt, N Kumar, AK Kapoor, R Singh ACS Applied Nano Materials 7 (7), 8212-8220, 2024 | 6 | 2024 |
| Effective-concentration-ratio driven phase engineering of MBE-grown few-layer MoTe 2 K Bhatt, S Kandar, N Kumar, A Kapoor, R Singh Nanoscale 16, 15381-15395, 2024 | 5 | 2024 |
| Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices N Kumar, S Kandar, K Bhatt, A Kapoor, R Singh ACS Applied Nano Materials 7 (9), 10870-10878, 2024 | 3 | 2024 |
| Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO N Kumar, N Wadehra, R Tomar, S Dattagupta, S Kumar, S Chakraverty arXiv preprint arXiv:1908.04977, 2019 | 3 | 2019 |
| Nano-electrical domain writing for oxide electronics N Wadehra, N Kumar, S Mishra, R Tomar, S Chakraverty Applied Surface Science 509, 145214, 2020 | 2 | 2020 |
| Optical Properties of Nanoscale-Thick 2H and 1T′ MoTe2 Films via Spectroscopic Ellipsometry: Implications for Optoelectronic Devices N Kumar, K Bhatt, S Kandar, G Rana, C Bera, AK Kapoor, R Singh ACS Applied Nano Materials 7 (20), 23834–23841, 2024 | 1 | 2024 |
| Film thickness-induced optical and electrical modifications in large-area few-layer 2H-MoSe 2 grown by MBE S Kandar, K Bhatt, N Kumar, A Kapoor, R Singh Nanoscale 16 (39), 18609-18619, 2024 | 1 | 2024 |
Suvankar ChakravertyInstitute of Nano Science and Technology, Mohaliایمیل تأیید شده در inst.ac.in