| Targeting cell death pathways for cancer therapy: recent developments in necroptosis, pyroptosis, ferroptosis, and cuproptosis research X Tong, R Tang, M Xiao, J Xu, W Wang, B Zhang, J Liu, X Yu, S Shi Journal of hematology & oncology 15 (1), 174, 2022 | 455 | 2022 |
| GaN power integration for high frequency and high efficiency power applications: A review R Sun, J Lai, W Chen, B Zhang Ieee Access 8, 15529-15542, 2020 | 185 | 2020 |
| A novel 700-V SOI LDMOS with double-sided trench X Luo, B Zhang, Z Li, Y Guo, X Tang, Y Liu IEEE Electron Device Letters 28 (5), 422-424, 2007 | 137 | 2007 |
| A SiC power MOSFET loss model suitable for high-frequency applications X Li, J Jiang, AQ Huang, S Guo, X Deng, B Zhang, X She IEEE Transactions on Industrial Electronics 64 (10), 8268-8276, 2017 | 134 | 2017 |
| Understanding switching losses in SiC MOSFET: Toward lossless switching X Li, L Zhang, S Guo, Y Lei, AQ Huang, B Zhang 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 132 | 2015 |
| A 1.6-V 25-A 5-ppm/C Curvature-Compensated Bandgap Reference ZK Zhou, Y Shi, Z Huang, PS Zhu, YQ Ma, YC Wang, Z Chen, X Ming, ... IEEE Transactions on Circuits and Systems I: Regular Papers 59 (4), 677-684, 2011 | 128 | 2011 |
| New thin-film power MOSFETs with a buried oxide double step structure B Duan, B Zhang, Z Li IEEE Electron device letters 27 (5), 377-379, 2006 | 122 | 2006 |
| An ultrafast adaptively biased capacitorless LDO with dynamic charging control X Ming, Q Li, Z Zhou, B Zhang IEEE Transactions on Circuits and Systems II: Express Briefs 59 (1), 40-44, 2011 | 119 | 2011 |
| 7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang IEEE Electron Device Letters 37 (2), 165-168, 2015 | 115 | 2015 |
| High reverse blocking and low onset voltage AlGaN/GaN-on-Si lateral power diode with MIS-gated hybrid anode Q Zhou, Y Jin, Y Shi, J Mou, X Bao, B Chen, B Zhang IEEE Electron Device Letters 36 (7), 660-662, 2015 | 105 | 2015 |
| A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer X Luo, B Zhang, Z Li Solid-State Electronics 51 (3), 493-499, 2007 | 104 | 2007 |
| Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ... IEEE Transactions on Electron Devices 63 (2), 614-619, 2016 | 102 | 2016 |
| Field enhancement for dielectric layer of high-voltage devices on silicon on insulator B Zhang, Z Li, S Hu, X Luo IEEE transactions on electron devices 56 (10), 2327-2334, 2009 | 102 | 2009 |
| High-voltage LDMOS with charge-balanced surface low on-resistance path layer B Zhang, W Wang, W Chen, Z Li, Z Li IEEE Electron device letters 30 (8), 849-851, 2009 | 100 | 2009 |
| An ultralow-power fast-transient capacitor-free low-dropout regulator with assistant push–pull output stage X Qu, ZK Zhou, B Zhang, ZJ Li IEEE Transactions on Circuits and Systems II: Express Briefs 60 (2), 96-100, 2013 | 99 | 2013 |
| High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/Figure of Merit Q Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B Zhang IEEE Transactions on Electron Devices 62 (3), 776-781, 2015 | 95 | 2015 |
| Ultralow specific on-resistance high-voltage SOI lateral MOSFET X Luo, J Fan, Y Wang, T Lei, M Qiao, B Zhang, F Udrea IEEE electron device letters 32 (2), 185-187, 2010 | 94 | 2010 |
| Breakdown-voltage-enhancement technique for RF-based AlGaN/GaN HEMTs with a source-connected air-bridge field plate G Xie, E Xu, J Lee, N Hashemi, B Zhang, FY Fu, WT Ng IEEE electron device letters 33 (5), 670-672, 2012 | 89 | 2012 |
| A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector H Jiang, B Zhang, W Chen, Z Li, C Liu, Z Rao, B Dong IEEE Electron device letters 33 (3), 417-419, 2012 | 87 | 2012 |
| Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor AQ Huang, B Zhang Solid-State Electronics 44 (2), 325-340, 2000 | 84 | 2000 |
Wanjun ChenUniversity of Elecronic Science and Technology of Chinaایمیل تأیید شده در uestc.edu.cn