| A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes P Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ... IEEE Transactions on nuclear science 63 (1), 266-272, 2016 | 83 | 2016 |
| Analysis of bulk FinFET structural effects on single-event cross sections P Nsengiyumva, LW Massengill, ML Alles, BL Bhuva, DR Ball, ... IEEE Transactions on Nuclear Science 64 (1), 441-448, 2016 | 61 | 2016 |
| Angular effects on single-event mechanisms in bulk FinFET technologies P Nsengiyumva, LW Massengill, JS Kauppila, JA Maharrey, ... IEEE Transactions on Nuclear Science 65 (1), 223-230, 2017 | 35 | 2017 |
| The impact of charge collection volume and parasitic capacitance on SEUs in SOI-and bulk-FINFET D flip-flops DR Ball, ML Alles, JS Kauppila, RC Harrington, JA Maharrey, ... IEEE Transactions on Nuclear Science 65 (1), 326-330, 2017 | 30 | 2017 |
| Effect of transistor variants on single-event transients at the 14-/16-nm bulk FinFET technology generation RC Harrington, JA Maharrey, JS Kauppila, P Nsengiyumva, DR Ball, ... IEEE Transactions on Nuclear Science 65 (8), 1807-1813, 2018 | 24 | 2018 |
| Impact of single-event transient duration and electrical delay at reduced supply voltages on set mitigation techniques JA Maharrey, JS Kauppila, RC Harrington, P Nsengiyumva, DR Ball, ... IEEE Transactions on Nuclear Science 65 (1), 362-368, 2017 | 24 | 2017 |
| Exploiting parallelism and heterogeneity in a radiation effects test vehicle for efficient single-event characterization of nanoscale circuits JS Kauppila, JA Maharrey, RC Harrington, TD Haeffner, P Nsengiyumva, ... IEEE Transactions on Nuclear Science 65 (1), 486-494, 2017 | 20 | 2017 |
| Dual-interlocked logic for single-event transient mitigation JA Maharrey, JS Kauppila, RC Harrington, P Nsengiyumva, DR Ball, ... IEEE Transactions on Nuclear Science 65 (8), 1872-1878, 2017 | 15 | 2017 |
| Empirical modeling of FinFET SEU cross sections across supply voltage RC Harrington, JS Kauppila, JA Maharrey, TD Haeffner, AL Sternberg, ... IEEE Transactions on Nuclear Science 66 (7), 1427-1432, 2019 | 13 | 2019 |
| Characterization of the CMOS FinFET structure on single-event effects-basic charge collection mechanisms and soft error modes P Nsengiyumva Vanderbilt University, 2018 | 6 | 2018 |
| Single-event upset responses of dual-and triple-well designs at advanced planar and FinFET technologies H Zhang, H Jiang, TR Assis, DR Ball, I Chatterjee, B Narasimham, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 5 | 2016 |
| Investigating power characteristics of memristor-based logic gates and their applications in a security primitive J Dofe, J Frey, P Nsengiyumva, Q Yu 2015 IEEE 58th International Midwest Symposium on Circuits and Systems …, 2015 | 4 | 2015 |
| Investigation of single-event upsets in dynamic logic based flip-flops P Nsengiyumva, Q Yu 2015 IEEE International Symposium on Circuits and Systems (ISCAS), 818-821, 2015 | 2 | 2015 |
| Investigating the effects of single-event upsets in static and dynamic registers P Nsengiyumva University of New Hampshire, 2014 | 2 | 2014 |
| Exploiting SEU data analysis to extract fast SET pulses RC Harrington, JS Kauppila, JA Maharrey, TD Haeffner, EX Zhang, ... IEEE Transactions on Nuclear Science 66 (6), 932-937, 2019 | 1 | 2019 |
| List of Reviewers, RADECS 2020 Special Issue A Alessi, S Baeg, M Bagatin, D Ball, M Barbero, M Beaumel, J Bi, ... IEEE Transactions on Nuclear Science 68 (8), 2021 | | 2021 |
| 2022 REDW Reviewers G Allen, R Austin, D Ball, C Bélanger-Champagne, J Calkins, M Campola, ... | | |
