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| High Photoresponsivity in Ultrathin 2D Lateral Graphene:WS2:Graphene Photodetectors Using Direct CVD Growth T Chen, Y Sheng, Y Zhou, R Chang, X Wang, H Huang, Q Zhang, L Hou, ... ACS applied materials & interfaces 11 (6), 6421-6430, 2019 | 90 | 2019 |
| High-Performance WS2 Monolayer Light-Emitting Tunneling Devices Using 2D Materials Grown by Chemical Vapor Deposition Y Sheng, T Chen, Y Lu, RJ Chang, S Sinha, JH Warner ACS nano 13 (4), 4530-4537, 2019 | 77 | 2019 |
| MoS2 Liquid Cell Electron Microscopy Through Clean and Fast Polymer-Free MoS2 Transfer J Yang, MK Choi, Y Sheng, J Jung, K Bustillo, T Chen, SW Lee, P Ercius, ... Nano letters 19 (3), 1788-1795, 2019 | 70 | 2019 |
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| Ultrathin All-2D lateral graphene/GaS/graphene UV photodetectors by direct CVD growth T Chen, Y Lu, Y Sheng, Y Shu, X Li, RJ Chang, H Bhaskaran, JH Warner ACS Applied Materials & Interfaces 11 (51), 48172-48178, 2019 | 47 | 2019 |
| Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga2S3 X Wang, Y Sheng, RJ Chang, JK Lee, Y Zhou, S Li, T Chen, H Huang, ... ACS omega 3 (7), 7897-7903, 2018 | 47 | 2018 |
| High-performance all 2D-layered tin disulfide: Graphene photodetecting transistors with thickness-controlled interface dynamics RJ Chang, H Tan, X Wang, B Porter, T Chen, Y Sheng, Y Zhou, H Huang, ... ACS applied materials & interfaces 10 (15), 13002-13010, 2018 | 44 | 2018 |
| High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene–MoS2 Heterojunctions H Huang, W Xu, T Chen, RJ Chang, Y Sheng, Q Zhang, L Hou, JH Warner ACS Applied Materials & Interfaces 10 (43), 37258-37266, 2018 | 41 | 2018 |
| Self-Limiting Growth of High-Quality 2D Monolayer MoS2 by Direct Sulfurization Using Precursor-Soluble Substrates for Advanced Field-Effect Transistors and … Y Lu, T Chen, GH Ryu, H Huang, Y Sheng, RJ Chang, JH Warner ACS Applied Nano Materials 2 (1), 369-378, 2018 | 40 | 2018 |
| Postgrowth Substitutional Tin Doping of 2D WS2 Crystals Using Chemical Vapor Deposition RJ Chang, Y Sheng, GH Ryu, N Mkhize, T Chen, Y Lu, J Chen, JK Lee, ... ACS Applied Materials & Interfaces 11 (27), 24279-24288, 2019 | 34 | 2019 |
| GaS:WS2 Heterojunctions for Ultrathin Two-Dimensional Photodetectors with Large Linear Dynamic Range across Broad Wavelengths Y Lu, T Chen, N Mkhize, RJ Chang, Y Sheng, P Holdway, H Bhaskaran, ... ACS nano 15 (12), 19570-19580, 2021 | 27 | 2021 |
| 2D-Layer-Dependent Behavior in Lateral Au/WS2/Graphene Photodiode Devices with Optical Modulation of Schottky Barriers H Huang, Y Sheng, Y Zhou, Q Zhang, L Hou, T Chen, RJ Chang, ... ACS Applied nano materials 1 (12), 6874-6881, 2018 | 24 | 2018 |
| Morphology control of two-dimensional tin disulfide on transition metal dichalcogenides using chemical vapor deposition for nanoelectronic applications RJ Chang, Y Sheng, T Chen, N Mkhize, Y Lu, H Bhaskaran, JH Warner ACS Applied Nano Materials 2 (7), 4222-4231, 2019 | 22 | 2019 |
| Photocurrent direction control and increased photovoltaic effects in all-2D ultrathin vertical heterostructures using asymmetric h-BN tunneling barriers L Hou, Q Zhang, M Tweedie, V Shautsova, Y Sheng, Y Zhou, H Huang, ... ACS Applied Materials & Interfaces 11 (43), 40274-40282, 2019 | 11 | 2019 |
| Fabrication of two-dimensional graphene-based heterostructures for photodetection applications T Chen University of Oxford, 2019 | | 2019 |
| High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene–MoS₂ Heterojunctions H Huang, W Xu, T Chen, RJ Chang, Y Sheng, Q Zhang, L Hou, JH Warner | | 2018 |
