دنبال کردن
Mads Eide Ingebrigtsen
Mads Eide Ingebrigtsen
University of Oslo
ایمیل تأیید شده در smn.uio.no - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
Iron and intrinsic deep level states in Ga2O3‏
ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ...‏
Applied Physics Letters 112 (4), 042104, 2018‏
2862018
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3‏
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...‏
Apl Materials 7 (2), 2019‏
2232019
Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects‏
ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ...‏
Materials Science Forum 897, 755-758, 2017‏
342017
Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures‏
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...‏
Journal of Applied Physics 125 (18), 2019‏
242019
Electrical characterization and identification of deep levels in β-Ga2O3‏
ME Ingebrigtsen‏
32019
Band gap engineering of the ZnO/Si heterojunction using amorphous buffer layers‏
ME Ingebrigtsen‏
2014
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–6