دنبال کردن
Robert M. Wallace
Robert M. Wallace
University of Texas at Dallas
ایمیل تأیید شده در utdallas.edu - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
High-κ gate dielectrics: Current status and materials properties considerations‏
GD Wilk, RM Wallace, JM Anthony‏
Journal of applied physics 89 (10), 5243-5275, 2001‏
78272001
Carbon-based supercapacitors produced by activation of graphene‏
Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, ...‏
science 332 (6037), 1537-1541, 2011‏
67322011
Hafnium and zirconium silicates for advanced gate dielectrics‏
GD Wilk, RM Wallace, JM Anthony‏
Journal of Applied Physics 87 (1), 484-492, 2000‏
13692000
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2‏
A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ...‏
Applied Physics Letters 99 (12), 2011‏
11672011
The role of oxygen during thermal reduction of graphene oxide studied by infrared absorption spectroscopy‏
M Acik, G Lee, C Mattevi, A Pirkle, RM Wallace, M Chhowalla, K Cho, ...‏
The Journal of Physical Chemistry C 115 (40), 19761-19781, 2011‏
10322011
Near-unity photoluminescence quantum yield in MoS2‏
M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ...‏
Science 350 (6264), 1065-1068, 2015‏
9412015
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors‏
C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho‏
Applied Physics Letters 103 (5), 2013‏
9362013
Defect-Dominated Doping and Contact Resistance in MoS2‏
S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle‏
ACS nano 8 (3), 2880-2888, 2014‏
9122014
Zirconium and/or hafnium oxynitride gate dielectric‏
RM Wallace, RA Stoltz, GD Wilk‏
US Patent 6,013,553, 2000‏
8402000
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces‏
C Gong, L Colombo, RM Wallace, K Cho‏
Nano letters 14 (4), 1714-1720, 2014‏
8222014
High-K materials and metal gates for CMOS applications‏
J Robertson, RM Wallace‏
Materials Science and Engineering: R: Reports 88, 1-41, 2015‏
8132015
Two-dimensional gallium nitride realized via graphene encapsulation‏
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...‏
Nature materials 15 (11), 1166-1171, 2016‏
7672016
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon‏
GD Wilk, RM Wallace‏
Applied Physics Letters 74 (19), 2854-2856, 1999‏
6761999
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts‏
S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ...‏
Nano letters 14 (3), 1337-1342, 2014‏
6532014
Hole Selective MoOx Contact for Silicon Solar Cells‏
C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ...‏
Nano letters 14 (2), 967-971, 2014‏
6382014
GaAs interfacial self-cleaning by atomic layer deposition‏
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...‏
Applied Physics Letters 92 (7), 2008‏
4942008
Manganese Doping of Monolayer MoS2: The Substrate Is Critical‏
K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ...‏
Nano letters 15 (10), 6586-6591, 2015‏
4692015
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition‏
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...‏
ACS nano 9 (2), 2080-2087, 2015‏
4652015
First-principles study of metal–graphene interfaces‏
C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho‏
Journal of Applied Physics 108 (12), 2010‏
4612010
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures‏
YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ...‏
Nature Communications 6, 7311, 2015‏
4592015
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مقاله‌ها 1–20