| Shipping accident analysis in restricted waters: Lesson from the Suez Canal blockage in 2021 S Fan, Z Yang, J Wang, J Marsland Ocean engineering 266, 113119, 2022 | 77 | 2022 |
| On the role of astroglial syncytia in self-repairing spiking neural networks M Naeem, LJ McDaid, J Harkin, JJ Wade, J Marsland IEEE Transactions on Neural Networks and Learning Systems 26 (10), 2370-2380, 2015 | 60 | 2015 |
| Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect JS Marsland, RC Woods, CA Brownhill IEEE transactions on electron devices 39 (5), 1129-1135, 1992 | 59 | 1992 |
| Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (11), 1652-1655, 2018 | 56 | 2018 |
| A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficients JS Marsland Solid-state electronics 30 (1), 125-132, 1987 | 53 | 1987 |
| On the effect of ionization dead spaces on avalanche multiplication and noise for uniform electric fields JS Marsland Journal of applied physics 67 (4), 1929-1933, 1990 | 47 | 1990 |
| Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019 | 35 | 2019 |
| Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... IEEE Electron Device Letters 40 (8), 1269-1272, 2019 | 35 | 2019 |
| Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... 2019 Symposium on VLSI Technology, T238-T239, 2019 | 34 | 2019 |
| Random-telegraph-noise-enabled true random number generator for hardware security J Brown, JF Zhang, B Zhou, M Mehedi, P Freitas, J Marsland, Z Ji Scientific reports 10 (1), 17210, 2020 | 30 | 2020 |
| As-grown-generation model for positive bias temperature instability R Gao, Z Ji, JF Zhang, J Marsland, WD Zhang IEEE Transactions on Electron Devices 65 (9), 3662-3668, 2018 | 30 | 2018 |
| GeSe-based ovonic threshold switching volatile true random number generator Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ... IEEE Electron Device Letters 41 (2), 228-231, 2019 | 27 | 2019 |
| The Over-Reset Phenomenon in Ta2O5RRAM Device Investigated by the RTN-Based Defect Probing Technique Z Chai, W Zhang, P Freitas, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (7), 955-958, 2018 | 19 | 2018 |
| Neural network implementation using a single MOST per synapse DE Johnson, JS Marsland, W Eccleston IEEE transactions on neural networks 6 (4), 1008-1011, 1995 | 19 | 1995 |
| Supervised learning in spiking neural networks with limited precision: Snn/lp E Stromatias, JS Marsland 2015 International Joint Conference on Neural Networks (IJCNN), 1-7, 2015 | 18 | 2015 |
| Bias temperature instability of mosfets: Physical processes, models, and prediction JF Zhang, R Gao, M Duan, Z Ji, W Zhang, J Marsland Electronics 11 (9), 1420, 2022 | 17 | 2022 |
| Evaluating the generalisation capability of a CMOS based synapse A Ghani, L McDaid, A Belatreche, S Hall, S Huang, J Marsland, T Dowrick, ... Neurocomputing 83, 188-197, 2012 | 17 | 2012 |
| Cycling induced metastable degradation in GeSe Ovonic threshold switching selector Z Chai, W Zhang, S Clima, F Hatem, R Degraeve, Q Diao, JF Zhang, ... IEEE Electron Device Letters 42 (10), 1448-1451, 2021 | 16 | 2021 |
| Measured ionization coefficients in Ga Al As JPR David, JS Marsland, HY Hall, G Hill, NJ Mason, MA Pate, JS Roberts, ... Proc. 1984 Symp. GaAs Related Compounds, Inst. Phys. Conf. Ser, 247, 1985 | 16 | 1985 |
| TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device J Ma, Z Chai, WD Zhang, JF Zhang, J Marsland, B Govoreanu, ... IEEE Transactions on Electron Devices 66 (1), 777-784, 2018 | 15 | 2018 |
