Raman spectroscopy of graphene-based materials and its applications in related devices JB Wu, ML Lin, X Cong, HN Liu, PH Tan Chemical Society Reviews 47 (5), 1822-1873, 2018 | 1859 | 2018 |
Moiré Phonons in Twisted Bilayer MoS2 ML Lin, QH Tan, JB Wu, XS Chen, JH Wang, YH Pan, X Zhang, X Cong, ... Acs Nano 12 (8), 8770-8780, 2018 | 213 | 2018 |
Probing the edge-related properties of atomically thin MoS2 at nanoscale TX Huang, X Cong, SS Wu, KQ Lin, X Yao, YH He, JB Wu, YF Bao, ... Nature communications 10 (1), 5544, 2019 | 149 | 2019 |
Application of Raman spectroscopy to probe fundamental properties of two-dimensional materials X Cong, XL Liu, ML Lin, PH Tan npj 2D Materials and Applications 4 (1), 13, 2020 | 136 | 2020 |
Raman spectroscopy of two-dimensional borophene sheets S Sheng, JB Wu, X Cong, Q Zhong, W Li, W Hu, J Gou, P Cheng, PH Tan, ... Acs Nano 13 (4), 4133-4139, 2019 | 111 | 2019 |
Vibrational properties of a monolayer silicene sheet studied by tip-enhanced Raman spectroscopy S Sheng, J Wu, X Cong, W Li, J Gou, Q Zhong, P Cheng, P Tan, L Chen, ... Physical Review Letters 119 (19), 196803, 2017 | 99 | 2017 |
Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning S Hao, J Zeng, T Xu, X Cong, C Wang, C Wu, Y Wang, X Liu, T Cao, G Su, ... Advanced Functional Materials 28 (36), 1803746, 2018 | 89 | 2018 |
Cross-dimensional electron-phonon coupling in van der Waals heterostructures ML Lin, Y Zhou, JB Wu, X Cong, XL Liu, J Zhang, H Li, W Yao, PH Tan Nature communications 10 (1), 2419, 2019 | 81 | 2019 |
The intrinsic temperature-dependent Raman spectra of graphite in the temperature range from 4K to 1000K HN Liu, X Cong, ML Lin, PH Tan Carbon 152, 451-458, 2019 | 70 | 2019 |
The pentagonal nature of self-assembled silicon chains and magic clusters on Ag (110) S Sheng, R Ma, J Wu, W Li, L Kong, X Cong, D Cao, W Hu, J Gou, JW Luo, ... Nano letters 18 (5), 2937-2942, 2018 | 67 | 2018 |
Linear Dichroism Conversion in Quasi‐1D Perovskite Chalcogenide J Wu, X Cong, S Niu, F Liu, H Zhao, Z Du, J Ravichandran, PH Tan, ... Advanced Materials 31 (33), 1902118, 2019 | 66 | 2019 |
Probing the acoustic phonon dispersion and sound velocity of graphene by Raman spectroscopy X Cong, QQ Li, X Zhang, ML Lin, JB Wu, XL Liu, P Venezuela, PH Tan Carbon 149, 19-24, 2019 | 53 | 2019 |
Intrinsic charge storage capability of transition metal dichalcogenides as pseudocapacitor electrodes X Cong, C Cheng, Y Liao, Y Ye, C Dong, H Sun, X Ji, W Zhang, P Fang, ... The Journal of Physical Chemistry C 119 (36), 20864-20870, 2015 | 46 | 2015 |
The role of terminations and coordination atoms on the pseudocapacitance of titanium carbonitride monolayers W Zhang, C Cheng, P Fang, B Tang, J Zhang, G Huang, X Cong, B Zhang, ... Physical Chemistry Chemical Physics 18 (6), 4376-4384, 2016 | 39 | 2016 |
Visualizing the structural evolution of individual active sites in MoS2 during electrocatalytic hydrogen evolution reaction TX Huang, X Cong, SS Wu, JB Wu, YF Bao, MF Cao, L Wu, ML Lin, ... Nature Catalysis, 1-9, 2024 | 36 | 2024 |
Understanding angle-resolved polarized Raman scattering from black phosphorus at normal and oblique laser incidences ML Lin, YC Leng, X Cong, D Meng, J Wang, XL Li, B Yu, XL Liu, XF Yu, ... Science Bulletin 65 (22), 1894-1900, 2020 | 32 | 2020 |
Abnormal Out-of-Plane Vibrational Raman Mode in Electrochemically Intercalated Multilayer MoS2 Y Sun, S Yin, R Peng, J Liang, X Cong, Y Li, C Li, B Wang, ML Lin, ... Nano Letters 23 (11), 5342-5349, 2023 | 27 | 2023 |
Optical identification of interlayer coupling of graphene/MoS2 van der Waals heterostructures M Yang, L Wang, G Hu, X Chen, PL Gong, X Cong, Y Liu, Y Yang, X Li, ... Nano Research 14, 2241-2246, 2021 | 22 | 2021 |
The phonon confinement effect in two-dimensional nanocrystals of black phosphorus with anisotropic phonon dispersions T Lin, X Cong, ML Lin, XL Liu, PH Tan Nanoscale 10 (18), 8704-8711, 2018 | 21 | 2018 |
Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure X Cong, M Lin, PH Tan Journal of Semiconductors 40 (9), 091001, 2019 | 17 | 2019 |