| Rise of silicene: A competitive 2D material J Zhao, H Liu, Z Yu, R Quhe, S Zhou, Y Wang, CC Liu, H Zhong, N Han, ... Progress in Materials Science 83, 24-151, 2016 | 885 | 2016 |
| Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations H Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ... Scientific reports 6 (1), 21786, 2016 | 326 | 2016 |
| Tunable and sizable band gap in silicene by surface adsorption R Quhe, R Fei, Q Liu, J Zheng, H Li, C Xu, Z Ni, Y Wang, D Yu, Z Gao, ... Scientific reports 2 (1), 853, 2012 | 309 | 2012 |
| Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene Y Wang, P Huang, M Ye, R Quhe, Y Pan, H Zhang, H Zhong, J Shi, J Lu Chemistry of Materials 29 (5), 2191-2201, 2017 | 281 | 2017 |
| Monolayer phosphorene–metal contacts Y Pan, Y Wang, M Ye, R Quhe, H Zhong, Z Song, X Peng, D Yu, J Yang, ... Chemistry of Materials 28 (7), 2100-2109, 2016 | 226 | 2016 |
| Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride R Quhe, J Zheng, G Luo, Q Liu, R Qin, J Zhou, D Yu, S Nagase, WN Mei, ... NPG Asia Materials 4 (2), e6-e6, 2012 | 226 | 2012 |
| High-performance sub-10 nm monolayer Bi 2 O 2 Se transistors R Quhe, J Liu, J Wu, J Yang, Y Wang, Q Li, T Li, Y Guo, J Yang, H Peng, ... Nanoscale 11 (2), 532-540, 2019 | 219 | 2019 |
| Does p-type ohmic contact exist in WSe 2–metal interfaces? Y Wang, RX Yang, R Quhe, H Zhong, L Cong, M Ye, Z Ni, Z Song, J Yang, ... Nanoscale 8 (2), 1179-1191, 2016 | 202 | 2016 |
| Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu Nanoscale 6 (13), 7609-7618, 2014 | 195 | 2014 |
| Structural and electronic properties of bilayer and trilayer graphdiyne Q Zheng, G Luo, Q Liu, R Quhe, J Zheng, K Tang, Z Gao, S Nagase, J Lu Nanoscale 4 (13), 3990-3996, 2012 | 184 | 2012 |
| Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors R Quhe, Q Li, Q Zhang, Y Wang, H Zhang, J Li, X Zhang, D Chen, K Liu, ... Physical Review Applied 10 (2), 024022, 2018 | 172 | 2018 |
| Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation J Zheng, L Wang, R Quhe, Q Liu, H Li, D Yu, WN Mei, J Shi, Z Gao, J Lu Scientific reports 3 (1), 1314, 2013 | 165 | 2013 |
| Sub-10 nm two-dimensional transistors: Theory and experiment R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ... Physics Reports 938, 1-72, 2021 | 142 | 2021 |
| Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ... Reports on Progress in Physics 84 (5), 056501, 2021 | 141 | 2021 |
| Half-metallic silicene and germanene nanoribbons: towards high-performance spintronics device Y Wang, J Zheng, Z Ni, R Fei, Q Liu, R Quhe, C Xu, J Zhou, Z Gao, J Lu Nano 7 (05), 1250037, 2012 | 120 | 2012 |
| Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors Z Ni, M Ye, J Ma, Y Wang, R Quhe, J Zheng, L Dai, D Yu, J Shi, J Yang, ... Advanced Electronic Materials 2 (9), 1600191, 2016 | 119 | 2016 |
| Many-body effect and device performance limit of monolayer InSe Y Wang, R Fei, R Quhe, J Li, H Zhang, X Zhang, B Shi, L Xiao, Z Song, ... ACS applied materials & interfaces 10 (27), 23344-23352, 2018 | 118 | 2018 |
| Does the Dirac cone exist in silicene on metal substrates? R Quhe, Y Yuan, J Zheng, Y Wang, Z Ni, J Shi, D Yu, J Yang, J Lu Scientific Reports 4 (1), 5476, 2014 | 117 | 2014 |
| Graphdiyne–metal contacts and graphdiyne transistors Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ... Nanoscale 7 (5), 2116-2127, 2015 | 114 | 2015 |
| Nonlinear optical properties of MoS2-WS2 heterostructure in fiber lasers WJ Liu, ML Liu, B Liu, RG Quhe, M Lei, SB Fang, H Teng, ZY Wei Optics express 27 (5), 6689-6699, 2019 | 110 | 2019 |
Yuanyuan PanChina University of PetroleumVahvistettu sähköpostiosoite verkkotunnuksessa pku.edu.cn