An Overview of the Ultrawide Bandgap Ga2 O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application HW Xue, QM He, GZ Jian, SB Long, T Pang, M Liu
Nanoscale research letters 13, 1-13, 2018
269 2018 Metal–Semiconductor–Metal ε-Ga2 O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism Y Qin, L Li, X Zhao, GS Tompa, H Dong, G Jian, Q He, P Tan, X Hou, ...
Acs Photonics 7 (3), 812-820, 2020
213 2020 Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics Q He, W Mu, H Dong, S Long, Z Jia, H Lv, Q Liu, M Tang, X Tao, M Liu
Applied Physics Letters 110 (9), 2017
190 2017 Low defect density and small I− V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2 W Hao, Q He, K Zhou, G Xu, W Xiong, X Zhou, G Jian, C Chen, X Zhao, ...
Applied Physics Letters 118 (4), 2021
144 2021 Review of deep ultraviolet photodetector based on gallium oxide Y Qin, S Long, H Dong, Q He, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ...
Chinese Physics B 28 (1), 018501, 2019
134 2019 Amorphous gallium oxide‐based gate‐tunable high‐performance thin film phototransistor for solar‐blind imaging Y Qin, S Long, Q He, H Dong, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ...
Advanced Electronic Materials 5 (7), 1900389, 2019
122 2019 High-Performance Metal-Organic Chemical Vapor Deposition Grown 2 O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes Y Qin, H Sun, S Long, GS Tompa, T Salagaj, H Dong, Q He, G Jian, Q Liu, ...
IEEE Electron Device Letters 40 (9), 1475-1478, 2019
115 2019 Schottky Barrier Rectifier Based on (100)2 O3 and its DC and AC Characteristics Q He, W Mu, B Fu, Z Jia, S Long, Z Yu, Z Yao, W Wang, H Dong, Y Qin, ...
IEEE Electron Device Letters 39 (4), 556-559, 2018
73 2018 Enhancement-Mode 2 O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio Y Qin, H Dong, S Long, Q He, G Jian, Y Zhang, X Zhou, Y Yu, X Hou, ...
IEEE Electron Device Letters 40 (5), 742-745, 2019
71 2019 Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material H Dong, H Xue, Q He, Y Qin, G Jian, S Long, M Liu
Journal of Semiconductors 40 (1), 011802, 2019
64 2019 Fast Switching 2 O3 Power MOSFET With a Trench-Gate Structure H Dong, S Long, H Sun, X Zhao, Q He, Y Qin, G Jian, X Zhou, Y Yu, ...
IEEE Electron Device Letters 40 (9), 1385-1388, 2019
61 2019 Characterization of the inhomogeneous barrier distribution in a Pt/(100) β-Ga2O3 Schottky diode via its temperature-dependent electrical properties G Jian, Q He, W Mu, B Fu, H Dong, Y Qin, Y Zhang, H Xue, S Long, Z Jia, ...
AIP Advances 8 (1), 2018
60 2018 Over 1 GW/cm2 Vertical Ga2 O3 Schottky Barrier Diodes Without Edge Termination Q He, W Hao, X Zhou, Y Li, K Zhou, C Chen, W Xiong, G Jian, G Xu, ...
IEEE Electron Device Letters 43 (2), 264-267, 2021
56 2021 Realizing high-performance β-Ga₂O₃ MOSFET by using variation of lateral doping: a TCAD study X Zhou, Q Liu, G Xu, K Zhou, X Xiang, Q He, W Hao, G Jian, X Zhao, ...
IEEE Transactions on Electron Devices 68 (4), 1501-1506, 2021
55 2021 CV and JV investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3 H Dong, W Mu, Y Hu, Q He, B Fu, H Xue, Y Qin, G Jian, Y Zhang, S Long, ...
AIP Advances 8 (6), 2018
52 2018 Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing X Zhou, Y Ma, G Xu, Q Liu, J Liu, Q He, X Zhao, S Long
Applied Physics Letters 121 (22), 2022
48 2022 Improved Vertical β-Ga2 O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension W Hao, F Wu, W Li, G Xu, X Xie, K Zhou, W Guo, X Zhou, Q He, X Zhao, ...
IEEE Transactions on Electron Devices 70 (4), 2129-2134, 2023
47 2023 Double-Barrier β-Ga2 O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current W Xiong, X Zhou, G Xu, Q He, G Jian, C Chen, Y Yu, W Hao, X Xiang, ...
IEEE Electron Device Letters 42 (3), 430-433, 2021
47 2021 Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications Q He, X Zhou, Q Li, W Hao, Q Liu, Z Han, K Zhou, C Chen, J Peng, G Xu, ...
IEEE Electron Device Letters 43 (11), 1933-1936, 2022
41 2022 2.6 kV NiO/Ga2 O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability W Hao, Q He, X Zhou, X Zhao, G Xu, S Long
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
38 2022 