Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics L Liu, J Han, L Xu, J Zhou, C Zhao, S Ding, H Shi, M Xiao, L Ding, Z Ma, ... Science 368 (6493), 850-856, 2020 | 449 | 2020 |
Scaling aligned carbon nanotube transistors to a sub-10 nm node Y Lin, Y Cao, S Ding, P Zhang, L Xu, C Liu, Q Hu, C Jin, LM Peng, ... Nature Electronics 6 (7), 506-515, 2023 | 77 | 2023 |
Space-confined and substrate-directed synthesis of transition-metal dichalcogenide nanostructures with tunable dimensionality Z Duan, T Chen, J Shi, J Li, K Song, C Zhang, S Ding, B Li, G Wang, S Hu, ... Science Bulletin 65 (12), 1013-1021, 2020 | 37 | 2020 |
Wafer‐scale single‐crystalline MoSe2 and WSe2 monolayers grown by molecular‐beam epitaxy at low‐temperature — the role of island‐substrate interaction and … Y Xia, D Ding, K Xiao, J Zhang, S Xu, D He, X Yue, Q Rao, X Wang, ... Natural Sciences 3 (2), 20220059, 2023 | 19 | 2023 |
Carbon nanotube-based flexible ferroelectric synaptic transistors for neuromorphic computing F Xia, T Xia, L Xiang, S Ding, S Li, Y Yin, M Xi, C Jin, X Liang, Y Hu ACS Applied Materials & Interfaces 14 (26), 30124-30132, 2022 | 19 | 2022 |
Hf-contacted high-performance air-stable n-type carbon nanotube transistors X Liu, Z Wu, D Hong, W Wu, C Xue, X Cai, S Ding, F Yao, C Jin, S Wang ACS Applied Electronic Materials 3 (10), 4623-4629, 2021 | 15 | 2021 |
Quantify point defects in monolayer tungsten diselenide S Ding, F Lin, C Jin Nanotechnology 32 (25), 255701, 2021 | 14 | 2021 |
Monolithic three‐dimensional integration of aligned carbon nanotube transistors for high‐performance integrated circuits C Fan, X Cheng, L Xu, M Zhu, S Ding, C Jin, Y Xie, LM Peng, Z Zhang InfoMat 5 (7), e12420, 2023 | 13 | 2023 |
Ferrielectricity controlled widely-tunable magnetoelectric coupling in van der Waals multiferroics Q Hu, Y Huang, Y Wang, S Ding, M Zhang, C Hua, L Li, X Xu, J Yang, ... Nature Communications 15 (1), 3029, 2024 | 9 | 2024 |
Interface and border traps in the gate stack of carbon nanotube film transistors with an Yttria dielectric H Xiao, Y Liu, S Ding, Y Gao, M Zhai, X Liang, C Jin, H Liu, Z Zhang ACS Applied Electronic Materials 5 (7), 3908-3916, 2023 | 6 | 2023 |
Interface states in gate stack of carbon nanotube array transistors Y Liu, S Ding, W Li, Z Zhang, Z Pan, Y Ze, B Gao, Y Zhang, C Jin, ... ACS nano 18 (29), 19086-19098, 2024 | 5 | 2024 |
Interface states of metal‒oxide‒semiconductor devices based on aligned carbon nanotube arrays Z Zhang, Y Liu, S Ding, W Li, Z Zhang, Z Pan, Y Ze, B Gao, Y Zhang, C Jin, ... | | 2023 |
Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node Z Zhang, Y Lin, Y Cao, S Ding, L Xu, C Liu, Q Hu, C Jin, LM Peng | | 2022 |
基于空间限域与基底诱导策略的过渡金属硫属化合物纳米结构的可控制备及其维度调控 段卓君, 陈涛, 史建伟, 李金, 宋奎, 张婵, 丁素娟, 黎博, 王广, 胡斯桂 科学通报: 英文版 65 (12), 1013-1021, 2020 | | 2020 |