Seuraa
Rohit Abraham John
Rohit Abraham John
ASM America Inc.| Ex-ETH | Ex-NTU
Vahvistettu sähköpostiosoite verkkotunnuksessa asm.com
Nimike
Viittaukset
Viittaukset
Vuosi
Synergistic gating of electro‐iono‐photoactive 2D chalcogenide neuristors: coexistence of hebbian and homeostatic synaptic metaplasticity
RA John, F Liu, NA Chien, MR Kulkarni, C Zhu, Q Fu, A Basu, Z Liu, ...
Advanced Materials 30 (25), 1800220, 2018
3262018
Ionotronic halide perovskite drift‐diffusive synapses for low‐power neuromorphic computation
RA John, N Yantara, YF Ng, G Narasimman, E Mosconi, D Meggiolaro, ...
Advanced Materials 30 (51), 1805454, 2018
1972018
Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing
RA John, Y Demirağ, Y Shynkarenko, Y Berezovska, N Ohannessian, ...
Nature communications 13 (1), 2074, 2022
1812022
Halide perovskite memristors as flexible and reconfigurable physical unclonable functions
RA John, N Shah, SK Vishwanath, SE Ng, B Febriansyah, ...
Nature Communications 12 (1), 3681, 2021
1782021
Flexible ionic‐electronic hybrid oxide synaptic TFTs with programmable dynamic plasticity for brain‐inspired neuromorphic computing
RA John, J Ko, MR Kulkarni, N Tiwari, NA Chien, NG Ing, WL Leong, ...
Small 13 (32), 1701193, 2017
1742017
Facile Water-based Spray Pyrolysis of Earth-Abundant Cu2FeSnS4 Thin Films as an Efficient Counter Electrode in Dye-Sensitized Solar Cells
RR Prabhakar, N Huu Loc, MH Kumar, PP Boix, S Juan, RA John, ...
ACS applied materials & interfaces 6 (20), 17661-17667, 2014
1372014
Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
RA John, N Yantara, SE Ng, MIB Patdillah, MR Kulkarni, NF Jamaludin, ...
Advanced Materials 33 (15), 2007851, 2021
1272021
Assessing the drawbacks and benefits of ion migration in lead halide perovskites
K Sakhatskyi, RA John, A Guerrero, S Tsarev, S Sabisch, T Das, GJ Matt, ...
ACS Energy Letters 7 (10), 3401-3414, 2022
1142022
Superior Performance of Silver Bismuth Iodide Photovoltaics Fabricated via Dynamic Hot‐Casting Method under Ambient Conditions
B Ghosh, B Wu, X Guo, PC Harikesh, RA John, T Baikie, Arramel, ...
Advanced energy materials 8 (33), 1802051, 2018
992018
Self healable neuromorphic memtransistor elements for decentralized sensory signal processing in robotics
RA John, N Tiwari, MIB Patdillah, MR Kulkarni, N Tiwari, J Basu, SK Bose, ...
Nature communications 11 (1), 4030, 2020
982020
Completely solvent-free protocols to access phase-pure, metastable metal halide perovskites and functional photodetectors from the precursor salts
Z Hong, D Tan, RA John, YKE Tay, YKT Ho, X Zhao, TC Sum, N Mathews, ...
Iscience 16, 312-325, 2019
982019
Organic neuromorphic devices: Past, present, and future challenges
Y Tuchman, TN Mangoma, P Gkoupidenis, Y Van De Burgt, RA John, ...
MRS Bulletin 45 (8), 619-630, 2020
862020
Stability of perovskite materials and devices
W Fu, AG Ricciardulli, QA Akkerman, RA John, MM Tavakoli, S Essig, ...
Materials Today 58, 275-296, 2022
852022
Ultralow power dual-gated subthreshold oxide neuristors: an enabler for higher order neuronal temporal correlations
RA John, N Tiwari, C Yaoyi, Ankit, N Tiwari, M Kulkarni, A Nirmal, ...
ACS nano 12 (11), 11263-11273, 2018
812018
Low-temperature chemical transformations for high-performance solution-processed oxide transistors
RA John, NA Chien, S Shukla, N Tiwari, C Shi, NG Ing, N Mathews
Chemistry of Materials 28 (22), 8305-8313, 2016
772016
Atomically altered hematite for highly efficient perovskite tandem water‐splitting devices
Gurudayal, RA John, PP Boix, C Yi, C Shi, MC Scott, SA Veldhuis, ...
ChemSusChem 10 (11), 2449-2456, 2017
752017
Transparent flexible multifunctional nanostructured architectures for non-optical readout, proximity, and pressure sensing
MR Kulkarni, RA John, M Rajput, N Tiwari, N Yantara, AC Nguyen, ...
ACS applied materials & interfaces 9 (17), 15015-15021, 2017
622017
Ankit, SG Mhaisalkar, A. Basu, N. Mathews
RA John, N Yantara, SE Ng, MIB Patdillah, MR Kulkarni, NF Jamaludin
Adv. Mater 33 (15), 2007851, 2021
592021
Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
N Tiwari, A Nirmal, MR Kulkarni, RA John, N Mathews
Inorganic Chemistry Frontiers 7 (9), 1822-1844, 2020
572020
Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics
N Tiwari, M Rajput, RA John, MR Kulkarni, AC Nguyen, N Mathews
ACS applied materials & interfaces 10 (36), 30506-30513, 2018
572018
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Artikkelit 1–20