| Breakdown enhancement of AlGaN/GaN HEMTs on 4-in silicon by improving the GaN quality on thick buffer layers SL Selvaraj, T Suzue, T Egawa IEEE electron device letters 30 (6), 587-589, 2009 | 274 | 2009 |
| Buffer thickness contribution to suppress vertical leakage current with high breakdown field (2.3 MV/cm) for GaN on Si IB Rowena, SL Selvaraj, T Egawa IEEE Electron Device Letters 32 (11), 1534-1536, 2011 | 175 | 2011 |
| 1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate SL Selvaraj, A Watanabe, A Wakejima, T Egawa IEEE electron device letters 33 (10), 1375-1377, 2012 | 130 | 2012 |
| Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa Applied physics express 4 (8), 084101, 2011 | 76 | 2011 |
| AlN∕ AlGaN∕ GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. Silicon substrate for high breakdown characteristics SL Selvaraj, T Ito, Y Terada, T Egawa Applied physics letters 90 (17), 2007 | 63 | 2007 |
| III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same L Yuan, PGQ Lo, H Sun, KB Lee, W Wang, SL Selvaraj US Patent App. 14/389,043, 2015 | 61 | 2015 |
| Effect of GaN buffer layer growth pressure on the device characteristics of AlGaN/GaN high-electron-mobility transistors on Si J Selvaraj, SL Selvaraj, T Egawa Japanese Journal of Applied Physics 48 (12R), 121002, 2009 | 48 | 2009 |
| High power SiC inverter module packaging solutions for junction temperature over 220° C DRM Woo, HH Yuan, JAJ Li, HS Ling, LJ Bum, Z Songbai, Z Hengyun, ... 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC), 31-35, 2014 | 39 | 2014 |
| Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate SL Selvaraj, A Watanabe, T Egawa Applied Physics Letters 98 (25), 2011 | 38 | 2011 |
| Influence of ammonia in the deposition process of SiN on the performance of SiN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors on 4-in. Si (111) S Arulkumaran, LZ Hong, NG Ing, SL Selvaraj, T Egawa Applied Physics Express 2 (3), 031001, 2009 | 37 | 2009 |
| Applied Physics Express SL Selvaraj, T Suzue, T Egawa Applied Physics Express 2, 111005, 2009 | 30 | 2009 |
| Design and characterization of micro-LED matrix display with heterogeneous integration of GaN and BCD technologies MY Soh, WX Ng, TH Teo, SL Selvaraj, L Peng, D Disney, Q Zou, KS Yeo IEEE Transactions on Electron Devices 66 (10), 4221-4227, 2019 | 29 | 2019 |
| On-chip thin film inductor for high frequency DC-DC power conversion applications SL Selvaraj, M Haug, CS Cheng, D Dinulovic, L Peng, K El Shafey, Z Ali, ... 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 176-180, 2020 | 27 | 2020 |
| Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕ GaN high-electron-mobility transistors on 4in. silicon SL Selvaraj, T Egawa Applied physics letters 89 (19), 2006 | 27 | 2006 |
| Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron … JJ Freedsman, T Kubo, SL Selvaraj, T Egawa Japanese journal of applied physics 50 (4S), 04DF03, 2011 | 25 | 2011 |
| On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors S Arulkumaran, T Egawa, L Selvaraj, H Ishikawa Japanese journal of applied physics 45 (3L), L220, 2006 | 24 | 2006 |
| High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon S Arulkumaran, S Vicknesh, GI Ng, ZH Liu, SL Selvaraj, T Egawa physica status solidi (RRL)–Rapid Research Letters 5 (1), 37-39, 2011 | 20 | 2011 |
| Effect of carbon doping and crystalline quality on the vertical breakdown characteristics of GaN layers grown on 200-mm silicon substrates WZ Wang, SL Selvaraj, KT Win, SB Dolmanan, T Bhat, N Yakovlev, ... Journal of Electronic Materials 44, 3272-3276, 2015 | 18 | 2015 |
| Influence of growth parameters and thickness of AlN spacer on electrical properties of AlGaN/AlN/GaN high-electron-mobility transistors grown on 4-inch Si substrate S Tan, T Suzue, SL Selvaraj, T Egawa Japanese Journal of Applied Physics 48 (11R), 111002, 2009 | 18 | 2009 |
| Influence of deep pits on the breakdown of metalorganic chemical vapor deposition grown AlGaN/GaN high electron mobility transistors on silicon SL Selvaraj, T Suzue, T Egawa Applied Physics Express 2 (11), 111005, 2009 | 18 | 2009 |
