Investigations of HfO2∕ AlGaN∕ GaN metal-oxide-semiconductor high electron mobility transistors C Liu, EF Chor, LS Tan
Applied physics letters 88 (17), 2006
265 2006 Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide C Liu, EF Chor, LS Tan
Semiconductor science and technology 22 (5), 522, 2007
217 2007 Pulsed laser annealing of Be-implanted GaN HT Wang, LS Tan, EF Chor
Journal of applied physics 98 (9), 2005
198 2005 End of range (EOR) secondary defect engineering using substitutional carbon doping CF Tan, J Liu, HJ Lee, B Indajang, EF Chor, SY Ong
US Patent 7,109,099, 2006
102 2006 Embedded polysilicon gate MOSFET L Chan, CL Cha, EF Chor, G Hao, TK Lee
US Patent 6,252,277, 2001
83 2001 A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes EF Chor, A Brunnschweiler, P Ashburn
IEEE journal of solid-state circuits 23 (1), 251-259, 1988
71 1988 Transparent indium zinc oxide ohmic contact to phosphor-doped n-type zinc oxide G Hu, B Kumar, H Gong, EF Chor, P Wu
Applied physics letters 88 (10), 2006
67 2006 Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation M Sinha, EF Chor, YC Yeo
Applied Physics Letters 92 (22), 2008
58 2008 Properties of p-type and n-type ZnO influenced by P concentration G Hu, H Gong, EF Chor, P Wu
Applied physics letters 89 (25), 2006
57 2006 Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN EF Chor, D Zhang, H Gong, GL Chen, TYF Liew
Journal of Applied Physics 90 (3), 1242-1249, 2001
53 2001 Emitter resistance of arsenic-and phosphorus-doped polysilicon emitter transistors EF Chor, P Ashburn, A Brunnschweiler
IEEE electron device letters 6 (10), 516-518, 1985
49 1985 Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts EF Chor, D Zhang, H Gong, WK Chong, SY Ong
Journal of Applied Physics 87 (5), 2437-2444, 2000
43 2000 Improved electrical performance and thermal stability of HfO2/Al2O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS–HFETs F Tian, EF Chor
Journal of The Electrochemical Society 157 (5), H557, 2010
34 2010 Composite step-graded collector of InP/InGaAs/InP DHBT for minimised carrier blocking EF Chor, CJ Peng
Electronics Letters 32 (15), 1409-1410, 1996
31 1996 Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage Y Liu, SP Singh, YJ Ngoo, LM Kyaw, MK Bera, QQ Lo, EF Chor
Journal of Vacuum Science & Technology B 32 (3), 2014
30 2014 Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's EF Chor, RJ Malik, RA Hamm, R Ryan
IEEE Electron Device Letters 17 (2), 62-64, 1996
30 1996 Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕ GaN heterostructure C Liu, EF Chor, LS Tan, Y Dong
Applied physics letters 88 (22), 2006
29 2006 Mechanisms of ohmic contact formation and carrier transport of low temperature annealed Hf/Al/Ta on In0. 18Al0. 82N/GaN-on-Si Y Liu, SP Singh, LM Kyaw, MK Bera, YJ Ngoo, HR Tan, S Tripathy, GQ Lo, ...
ECS Journal of Solid State Science and Technology 4 (2), P30, 2014
28 2014 Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities WS Lau, EF Chor, CSFCS Foo, WCKWC Khoong
Japanese journal of applied physics 31 (8A), L1021, 1992
28 1992 Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for EF Chor, WK Chong, CH Heng
Journal of applied physics 84 (5), 2977-2979, 1998
25 1998 