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Akshay Sahota
Akshay Sahota
FE Integration Engineer
Vahvistettu sähköpostiosoite verkkotunnuksessa intel.com
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Viittaukset
Viittaukset
Vuosi
A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ...
Materials 13 (13), 2968, 2020
422020
Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings
SM Hwang, HS Kim, DN Le, AV Ravichandran, A Sahota, J Lee, YC Jung, ...
ACS Applied Nano Materials 4 (3), 2558-2564, 2021
122021
Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for …
HS Kim, A Sahota, J Mohan, AT Lucero, Y Chan Jung, M Kim, JS Lee, ...
ACS Applied Electronic Materials 3 (5), 2309-2316, 2021
102021
High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor
HS Kim, SM Hwang, X Meng, YC Byun, YC Jung, AV Ravichandran, ...
Journal of Materials Chemistry C 8 (37), 13033-13039, 2020
102020
Robust low-temperature (350° C) ferroelectric Hf0. 5Zr0. 5O2 fabricated using anhydrous H2O2 as the ALD oxidant
YC Jung, JH Kim, H Hernandez-Arriaga, J Mohan, SM Hwang, DN Le, ...
Applied Physics Letters 121 (22), 2022
92022
Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors
J Mohan, YC Jung, H Hernandez-Arriaga, JH Kim, T Onaya, A Sahota, ...
ACS Applied Electronic Materials 4 (4), 1405-1414, 2022
82022
High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1, 1, 1-tris (dimethylamino) disilane
SM Hwang, HS Kim, DN Le, A Sahota, J Lee, YC Jung, SW Kim, SJ Kim, ...
Journal of Vacuum Science & Technology A 40 (2), 2022
42022
A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition
YC Jung, J Mohan, SM Hwang, JH Kim, DN Le, A Sahota, N Kim, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100053, 2021
42021
Highly reliable selection behavior with controlled Ag doping of nano-polycrystalline ZnO Layer for 3D X-Point framework
A Sahota, HS Kim, J Mohan, YC Jung, H Hernandez-Arriaga, DN Le, ...
IEEE Electron Device Letters 43 (1), 21-24, 2021
22021
Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
A Sahota, HS Kim, J Mohan, DN Le, YC Jung, SJ Kim, JS Lee, J Ahn, ...
AIP Advances 11 (11), 2021
22021
A Steep-Slope Threshold Switching Selector Using Silver-Doped Polycrystalline Zinc Oxide: Fabrication, Characterization, & Application for 3D X-Point Memory & Neuromorphic Devices
A Sahota
The University of Texas at Dallas, 2021
2021
A comprehensive study on the effect of tin top and bottom electrodes on atomic layer deposited ferroelectric Hf˂ inf˃ 0.5˂/inf˃ Zr˂ inf˃ 0.5˂/inf˃ O˂ inf˃ 2˂/inf˃ thin films
SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ...
MATERIALS 13 (13), 2020
2020
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