Radial modulation doping in core–shell nanowires DC Dillen, K Kim, ES Liu, E Tutuc
Nature nanotechnology 9 (2), 116-120, 2014
96 2014 Low refractive index Si nanopillars on Si substrate GR Lin, YC Chang, ES Liu, HC Kuo, HS Lin
Applied physics letters 90 (18), 2007
81 2007 Lateral spin injection in germanium nanowires ES Liu, J Nah, KM Varahramyan, E Tutuc
Nano letters 10 (9), 3297-3301, 2010
77 2010 J Nah, ES Liu, KM Varahramyan, E Tutuc
IEEE transactions on electron devices 57 (8), 1883-1888, 2010
50 2010 Characterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modeling SH Hsu, ES Liu, YC Chang, JN Hilfiker, YD Kim, TJ Kim, CJ Lin, GR Lin
physica status solidi (a) 205 (4), 876-879, 2008
40 2008 Realization of dual-gated Ge–SixGe1− x core-shell nanowire field effect transistors with highly doped source and drain J Nah, ES Liu, D Shahrjerdi, KM Varahramyan, SK Banerjee, E Tutuc
Applied Physics Letters 94 (6), 2009
36 2009 Doping of Ge–SixGe1− x core-shell nanowires using low energy ion implantation J Nah, K Varahramyan, ES Liu, SK Banerjee, E Tutuc
Applied Physics Letters 93 (20), 2008
28 2008 Enhanced-performance germanium nanowire tunneling field-effect transistors using flash-assisted rapid thermal process J Nah, ES Liu, KM Varahramyan, D Dillen, S McCoy, J Chan, E Tutuc
IEEE electron device letters 31 (12), 1359-1361, 2010
27 2010 LETTERS Silicon and Column IV Semiconductor Devices Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process J Nah, ES Liu, KM Varahramyan, D Dillen, S McCoy, J Chan, E Tutuc
IEEE Electron Device Letters 31 (12), 1359, 2010
27 2010 Role of metal–semiconductor contact in nanowire field-effect transistors ES Liu, N Jain, KM Varahramyan, J Nah, SK Banerjee, E Tutuc
IEEE Transactions on Nanotechnology 9 (2), 237-242, 2009
22 2009 Scaling Properties of J Nah, ES Liu, KM Varahramyan, D Shahrjerdi, SK Banerjee, E Tutuc
IEEE transactions on electron devices 57 (2), 491-495, 2009
19 2009 Negative Differential Resistance in Buried-Channel ES Liu, DQ Kelly, JP Donnelly, E Tutuc, SK Banerjee
IEEE electron device letters 30 (2), 136-138, 2009
8 2009 Realization and Scaling of ES Liu, DC Dillen, J Nah, B Fallahazad, K Kim, E Tutuc
IEEE transactions on electron devices 60 (12), 4027-4033, 2013
5 2013 Effects of Si-cap thickness and temperature on device performance of Si/Ge1− xCx/Si p-MOSFETs M Jamil, ES Liu, F Ferdousi, JP Donnelly, E Tutuc, SK Banerjee
Semiconductor science and technology 25 (4), 045005, 2010
4 2010 Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride K Lee, ES Liu, K Watanabe, T Taniguchi, J Nah
ACS applied materials & interfaces 10 (48), 40985-40989, 2018
2 2018 Electronic and spintronic transport in germanium nanostructures ES Liu
2014 Lateral Spin Injection in Germanium Nanowires (vol 10, pg 3297, 2010) ES Liu, J Nah, KM Varahramyan, E Tutuc
NANO LETTERS 11 (9), 4027-4027, 2011
2011 Semiconductor Nanowires: Contacts and Electronic Properties E Tutuc, ES Liu
Nanotechnology for Photovoltaics, 271-296, 2010
2010 Growth and electronic properties of Ge-SixGe1-x core-shell nanowire heterostructures J Nah, KM Varahramyan, ES Liu, A Opotowsky, D Ferrer, SK Banerjee, ...
Nanoepitaxy: Homo-and Heterogeneous Synthesis, Characterization, and Device …, 2009
2009 Top-gated Ge-Six Ge1−x core-shell nanowire field-effect transistors with highly doped source and drain J Nah, ES Liu, KM Varahramyan, D Shahrjerdi, SK Banerjee, E Tutuc
2009 Device Research Conference, 15-16, 2009
2009 
Emanuel TutucProfessor, The University of Texas at AustinVahvistettu sähköpostiosoite verkkotunnuksessa mer.utexas.edu
