Seuraa
C.R. Eddy, Jr.
C.R. Eddy, Jr.
U.S. Naval Research Laboratory
Vahvistettu sähköpostiosoite verkkotunnuksessa nrl.navy.mil
Nimike
Viittaukset
Viittaukset
Vuosi
Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates
JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ...
IEEE Electron Device Letters 30 (6), 650-652, 2009
5042009
Handbook of advanced plasma processing techniques
RJ Shul, SJ Pearton
Springer Science & Business Media, 2011
3642011
Silicon carbide as a platform for power electronics
CR Eddy Jr, DK Gaskill
Science 324 (5933), 1398-1400, 2009
3502009
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2932010
Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
MA Mastro, CR Eddy Jr, S Akbar
US Patent 7,928,471, 2011
2792011
Hall effect mobility of epitaxial graphene grown on silicon carbide
JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ...
Applied Physics Letters 95 (12), 2009
2562009
Quantum linear magnetoresistance in multilayer epitaxial graphene
AL Friedman, JL Tedesco, PM Campbell, JC Culbertson, E Aifer, ...
Nano letters 10 (10), 3962-3965, 2010
2512010
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ...
Nano letters 9 (8), 2873-2876, 2009
2492009
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm
JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ...
IEEE Electron Device Letters 31 (4), 260-262, 2010
1912010
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE electron device letters 33 (1), 23-25, 2011
1682011
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric
MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ...
ECS Journal of Solid State Science and Technology 5 (9), P468, 2016
1632016
Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ...
Journal of Electronic Materials 45, 2031-2037, 2016
1552016
Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions
MK Yakes, D Gunlycke, JL Tedesco, PM Campbell, RL Myers-Ward, ...
Nano letters 10 (5), 1559-1562, 2010
1532010
Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
CR Eddy Jr, TD Moustakas, J Scanlon
Journal of applied physics 73 (1), 448-455, 1993
1491993
Surface depletion effects in semiconducting nanowires
BS Simpkins, MA Mastro, CR Eddy, PE Pehrsson
Journal of Applied Physics 103 (10), 2008
1432008
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ...
Journal of crystal growth 350 (1), 21-26, 2012
1372012
Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
BJ Kim, C Lee, Y Jung, K Hyeon Baik, MA Mastro, JK Hite, CR Eddy, ...
Applied Physics Letters 99 (14), 2011
1332011
Development of solar-blind photodetectors based on Si-implanted β-Ga2O3
S Oh, Y Jung, MA Mastro, JK Hite, CR Eddy Jr, J Kim
Optics Express 23 (22), 28300-28305, 2015
1282015
Morphology characterization of argon-mediated epitaxial graphene on C-face SiC
JL Tedesco, GG Jernigan, JC Culbertson, JK Hite, Y Yang, KM Daniels, ...
Applied Physics Letters 96 (22), 2010
1262010
Low-phase-noise graphene FETs in ambipolar RF applications
JS Moon, D Curtis, D Zehnder, S Kim, DK Gaskill, GG Jernigan, ...
IEEE Electron Device Letters 32 (3), 270-272, 2011
1202011
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Artikkelit 1–20