Artikkelit, joihin on yleisen käytön mandaatti - Gerard GhibaudoLisätietoja
Ei saatavilla missään: 48
Exploring the charge transport in conjugated polymers
Y Xu, H Sun, W Li, YF Lin, F Balestra, G Ghibaudo, YY Noh
Advanced Materials 29 (41), 1702729, 2017
Mandaatit: National Natural Science Foundation of China
Essential effects on the mobility extraction reliability for organic transistors
Y Xu, H Sun, A Liu, H Zhu, B Li, T Minari, F Balestra, G Ghibaudo, YY Noh
Advanced Functional Materials 28 (42), 1803907, 2018
Mandaatit: National Natural Science Foundation of China
Variability evaluation of 28nm FD-SOI technology at cryogenic temperatures down to 100mK for quantum computing
BC Paz, L Le Guevel, M Cassé, G Billiot, G Pillonnet, AGM Jansen, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandaatit: European Commission
All operation region characterization and modeling of drain and gate current mismatch in 14-nm fully depleted SOI MOSFETs
TA Karatsori, CG Theodorou, E Josse, CA Dimitriadis, G Ghibaudo
IEEE Transactions on Electron Devices 64 (5), 2080-2085, 2017
Mandaatit: European Commission
Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, J Cluzel, JP Barnes, S Martin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2019
Mandaatit: Agence Nationale de la Recherche
28nm FDSOI CMOS technology (FEOL and BEOL) thermal stability for 3D sequential integration: Yield and reliability analysis
C Cavalcante, C Fenouillet-Beranger, P Batude, X Garros, X Federspiel, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandaatit: European Commission
Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K
M Cassé, B Cardoso Paz, G Ghibaudo, T Poiroux, E Vincent, P Galy, ...
Applied Physics Letters 116 (24), 2020
Mandaatit: European Commission
Endurance statistical behavior of resistive memories based on experimental and theoretical investigation
DA Robayo, G Sassine, Q Rafhay, G Ghibaudo, G Molas, E Nowak
IEEE Transactions on Electron Devices 66 (8), 3318-3325, 2019
Mandaatit: Agence Nationale de la Recherche
Cryogenic operation of thin-film FDSOI nMOS transistors: The effect of back bias on drain current and transconductance
M Cassé, BC Paz, G Ghibaudo, T Poiroux, S Barraud, M Vinet, ...
IEEE Transactions on Electron Devices 67 (11), 4636-4640, 2020
Mandaatit: European Commission
Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2020
Mandaatit: Agence Nationale de la Recherche
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs
EG Ioannidis, S Haendler, CG Theodorou, N Planes, CA Dimitriadis, ...
2014 44th European Solid State Device Research Conference (ESSDERC), 214-217, 2014
Mandaatit: European Commission
All-operation-regime characterization and modeling of drain current variability in junctionless and inversion-mode FDSOI transistors
D Bosch, JP Colinge, G Ghibaudo, X Garros, S Barraud, J Lacord, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Mandaatit: European Commission, Agence Nationale de la Recherche
Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim, G Ghibaudo
Solid-state electronics 99, 104-107, 2014
Mandaatit: European Commission
On the zero temperature coefficient in cryogenic FD-SOI MOSFETs
E Catapano, TM Frutuoso, M Cassé, G Ghibaudo
IEEE Transactions on Electron Devices 70 (3), 845-849, 2022
Mandaatit: European Commission, Agence Nationale de la Recherche
Analysis and compact modeling of gate capacitance in organic thin-film transistors
H Cortes-Ordonez, S Jacob, F Mohamed, G Ghibaudo, B Iñiguez
IEEE Transactions on Electron Devices 66 (5), 2370-2374, 2019
Mandaatit: European Commission, Government of Spain
Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique
L Pirro, I Ionica, G Ghibaudo, X Mescot, L Faraone, S Cristoloveanu
Journal of Applied Physics 119 (17), 2016
Mandaatit: European Commission
Integrated variability measurements of 28 nm FDSOI MOSFETs down to 4.2 K for cryogenic CMOS applications
BC Paz, L Le Guevel, M Cassé, G Billiot, G Pillonnet, A Jansen, ...
2020 IEEE 33rd International Conference on Microelectronic Test Structures …, 2020
Mandaatit: European Commission
FDSOI for cryoCMOS electronics: device characterization towards compact model
M Cassé, BC Paz, F Bergamaschi, G Ghibaudo, F Serra, G Billiot, ...
2022 International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2022
Mandaatit: European Commission
Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ...
IEEE Transactions on Electron Devices 68 (4), 2017-2024, 2021
Mandaatit: Agence Nationale de la Recherche
Interface state densities, low frequency noise and electron mobility in surface channel In0. 53Ga0. 47As n-MOSFETs with a ZrO2 gate dielectric
MA Negara, N Goel, D Bauza, G Ghibaudo, PK Hurley
Microelectronic engineering 88 (7), 1095-1097, 2011
Mandaatit: Science Foundation Ireland
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