The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
475 2020 Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
413 2018 Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
336 2017 MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck
APL Materials 7 (2), 2019
277 2019 Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
259 2018 Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 2018
188 2018 Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
168 2018 Delta Doped Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
158 2018 Trapping Effects in Si2 O3 MESFETs on an Fe-Doped2 O3 Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
115 2018 Breakdown Characteristics of 0.22 Ga0.78 )2 O3 /Ga2 O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
114 2019 Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck
APL Materials 7 (12), 2019
103 2019 AlGaN channel field effect transistors with graded heterostructure ohmic contacts S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan
Applied Physics Letters 109 (13), 2016
103 2016 Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 2015
103 2015 Evaluation of Low-Temperature Saturation Velocity in x Ga1–x )2 O3 /Ga2 O3 Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
102 2019 Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
96 2017 Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, E Ahmadi, JS Speck
Applied Physics Letters 117 (22), 2020
93 2020 Low 114 cm− 3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD F Alema, Y Zhang, A Osinsky, N Orishchin, N Valente, A Mauze, JS Speck
APL Materials 8 (2), 2020
91 2020 Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 2018
90 2018 Anisotropic etching of β-Ga2O3 using hot phosphoric acid Y Zhang, A Mauze, JS Speck
Applied Physics Letters 115 (1), 2019
85 2019 Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ...
APL Materials 7 (2), 2019
85 2019 
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVahvistettu sähköpostiosoite verkkotunnuksessa ece.osu.edu