Seuraa
Pavel Aseev
Pavel Aseev
Microsoft Quantum Lab Delft
Vahvistettu sähköpostiosoite verkkotunnuksessa microsoft.com
Nimike
Viittaukset
Viittaukset
Vuosi
Selectivity map for molecular beam epitaxy of advanced III–V quantum nanowire networks
P Aseev, A Fursina, F Boekhout, F Krizek, JE Sestoft, F Borsoi, S Heedt, ...
Nano letters 19 (1), 218-227, 2018
1262018
Field effect enhancement in buffered quantum nanowire networks
F Krizek, JE Sestoft, P Aseev, S Marti-Sanchez, S Vaitiekėnas, L Casparis, ...
Physical review materials 2 (9), 093401, 2018
1102018
Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE
DV Nechaev, PA Aseev, VN Jmerik, PN Brunkov, YV Kuznetsova, ...
Journal of crystal growth 378, 319-322, 2013
772013
Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices
S Heedt, M Quintero-Pérez, F Borsoi, A Fursina, N van Loo, GP Mazur, ...
Nature Communications 12 (1), 4914, 2021
742021
InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage
NH Alvi, PED Soto Rodriguez, P Aseev, VJ Gómez, W ul Hassan, ...
Nano Energy 13, 291-297, 2015
672015
Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring
VN Jmerik, AM Mizerov, DV Nechaev, PA Aseev, AA Sitnikova, ...
Journal of crystal growth 354 (1), 188-192, 2012
632012
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
P Aseev, PED Rodriguez, VJ Gómez, JM Mánuel, FM Morales, ...
Applied Physics Letters 106 (7), 2015
552015
Ballistic InSb nanowires and networks via metal-sown selective area growth
P Aseev, G Wang, L Binci, A Singh, S Martí-Sánchez, M Botifoll, LJ Stek, ...
Nano letters 19 (12), 9102-9111, 2019
492019
Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network
NH Alvi, PED Soto Rodriguez, P Kumar, VJ Gómez, P Aseev, AH Alvi, ...
Applied Physics Letters 104 (22), 2014
352014
Uniform low-to-high in composition InGaN layers grown on Si
P Aseev, PEDS Rodriguez, P Kumar, VJ Gómez, JM Mánuel, FM Morales, ...
Applied Physics Express 6 (11), 115503, 2013
262013
Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions
P Aseev, Ž Gačević, A Torres-Pardo, JM González-Calbet, E Calleja
Applied Physics Letters 108 (25), 2016
232016
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si (111)
PED Soto Rodriguez, P Aseev, VJ Gómez, P Kumar, N Ul Hassan Alvi, ...
Applied Physics Letters 106 (2), 2015
192015
Comparative study of single InGaN layers grown on Si (111) and GaN (0001) templates: The role of surface wetting and epitaxial constraint
VJ Gómez, Ž Gačević, PED Soto-Rodríguez, P Aseev, R Nötzel, E Calleja, ...
Journal of Crystal Growth 447, 48-54, 2016
112016
Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si (111)
PEDS Rodriguez, VC Nash, P Aseev, VJ Gómez, P Kumar, NUH Alvi, ...
Electrochemistry Communications 60, 158-162, 2015
112015
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
P Aseev, Ž Gačević, JM Mánuel, JJ Jiménez, R García, FM Morales, ...
Journal of Crystal Growth 493, 65-75, 2018
82018
Ivanov SV
VN Jmerik, AM Mizerov, DV Nechaev, PA Aseev, AA Sitnikova, ...
J. Cryst. Growth 2012, 354, 2012
62012
Järjestelmä ei voi suorittaa toimenpidettä nyt. Yritä myöhemmin uudelleen.
Artikkelit 1–16