| Energy-band parameters of atomic-layer-deposition AlO∕ InGaAs heterostructure ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong Applied physics letters 89, 012903, 2006 | 245 | 2006 |
| Interfacial self-cleaning in atomic layer deposition of HfO gate dielectric on InGaAs CH Chang, YK Chiou, YC Chang, KY Lee, TD Lin, TB Wu, M Hong, J Kwo Applied physics letters 89, 242911, 2006 | 180 | 2006 |
| High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕ Ga2O3 (Gd2O3) as gate dielectrics TD Lin, HC Chiu, P Chang, LT Tung, CP Chen, M Hong, J Kwo, W Tsai, ... Applied Physics Letters 93 (3), 033516, 2008 | 175 | 2008 |
| Atomic-layer-deposited HfO on InGaAs: Passivation and energy-band parameters YC Chang, ML Huang, KY Lee, YJ Lee, TD Lin, M Hong, J Kwo, TS Lay, ... Applied Physics Letters 92, 072901, 2008 | 138 | 2008 |
| Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1− xAs ML Huang, YC Chang, YH Chang, TD Lin, J Kwo, M Hong Applied Physics Letters 94 (5), 052106-052106-3, 2009 | 89 | 2009 |
| Realization of high-quality HfO< inf> 2</inf> on In< inf> 0.53</inf> Ga< inf> 0.47</inf> As by in-situ atomic-layer-deposition TD Lin, YH Chang, CA Lin, ML Huang, WC Lee, J Kwo, M Hong Applied Physics Letters 100 (17), 172110-172110-4, 2012 | 64* | 2012 |
| Self-aligned inversion-channel In< sub> 0.75</sub> Ga< sub> 0.25</sub> As metal–oxide–semiconductor field-effect-transistors using UHV-Al< sub> 2</sub> O< sub> 3</sub>/Ga< sub … TD Lin, HC Chiu, P Chang, YH Chang, YD Wu, M Hong, J Kwo Solid-State Electronics 54 (9), 919-924, 2010 | 47* | 2010 |
| InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS M Hong, J Kwo, TD Lin, ML Huang MRS bulletin 34 (07), 514-521, 2009 | 43 | 2009 |
| GaO (GdO) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices LK Chu, TD Lin, ML Huang, RL Chu, CC Chang, J Kwo, M Hong Applied Physics Letters 94, 202108, 2009 | 36 | 2009 |
| Effective passivation of In< inf> 0.2</inf> Ga< inf> 0.8</inf> As by HfO< inf> 2</inf> surpassing Al< inf> 2</inf> O< inf> 3</inf> via in-situ atomic layer deposition YH Chang, CA Lin, YT Liu, TH Chiang, HY Lin, ML Huang, TD Lin, TW Pi, ... Applied Physics Letters 101 (17), 172104-172104-5, 2012 | 35* | 2012 |
| Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-< i> κ</i> dielectrics on Ge without interfacial layers LK Chu, RL Chu, TD Lin, WC Lee, CA Lin, ML Huang, YJ Lee, J Kwo, ... Solid-State Electronics 54 (9), 965-971, 2010 | 33 | 2010 |
| GaO (GdO)∕ SiN dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion JF Zheng, W Tsai, TD Lin, YJ Lee, CP Chen, M Hong, J Kwo, S Cui, ... Applied Physics Letters 91, 223502, 2007 | 32* | 2007 |
| High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 TD Lin, WH Chang, RL Chu, YC Chang, YH Chang, MY Lee, PF Hong, ... Applied Physics Letters 103 (25), 253509, 2013 | 31 | 2013 |
| Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation CA Lin, HC Chiu, TH Chiang, TD Lin, YH Chang, WH Chang, YC Chang, ... Applied Physics Letters 98, 062108, 2011 | 29 | 2011 |
| Molecular beam epitaxy grown Ga2O3 (Gd2O3) high k dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics CH Lee, TD Lin, LT Tung, ML Huang, M Hong, J Kwo Journal of vacuum science & technology. B, Microelectronics and nanometer …, 2008 | 23 | 2008 |
| Self-aligned inversion n-channel In< sub> 0.2</sub> Ga< sub> 0.8</sub> As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga< sub> 2</sub> O< sub> 3 … CP Chen, TD Lin, YJ Lee, YC Chang, M Hong, J Kwo Solid-State Electronics 52 (10), 1615-1618, 2008 | 22* | 2008 |
| Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition TW Pi, HY Lin, TH Chiang, YT Liu, YC Chang, TD Lin, GK Wertheim, ... Applied Surface Science 284, 601-610, 2013 | 21 | 2013 |
| Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4× 6 surface with trimethylaluminum and water as precursors ML Huang, YH Chang, TD Lin, HY Lin, YT Liu, TW Pi, M Hong, J Kwo Applied Physics Letters 101, 212101, 2012 | 21 | 2012 |
| Engineering of threshold voltages in molecular beam epitaxy-grown AlO∕ GaO (GdO)∕ InGaAs YD Wu, TD Lin, TH Chiang, YC Chang, HC Chiu, YJ Lee, M Hong, CA Lin, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010 | 19* | 2010 |
| Molecular beam epitaxy-grown Al< sub> 2</sub> O< sub> 3</sub>/HfO< sub> 2</sub> high-κ dielectrics for germanium WC Lee, BH Chin, LK Chu, TD Lin, YJ Lee, LT Tung, CH Lee, M Hong, ... Journal of Crystal Growth 311 (7), 2187-2190, 2009 | 19* | 2009 |
Mao-Lin HuangTaiwan Semiconductor Manufacturing CompanyVahvistettu sähköpostiosoite verkkotunnuksessa oz.nthu.edu.tw