| Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-type SnS2 and Orthorhombic p-type SnS Crystals JH Ahn, MJ Lee, H Heo, JH Sung, K Kim, H Hwang, MH Jo Nano letters 15 (6), 3703-3708, 2015 | 342 | 2015 |
| Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity MJ Lee, JH Ahn, JH Sung, H Heo, SG Jeon, W Lee, JY Song, KH Hong, ... Nature Communications 7 (1), 12011, 2016 | 254 | 2016 |
| Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks H Heo, JH Sung, S Cha, BG Jang, JY Kim, G Jin, D Lee, JH Ahn, MJ Lee, ... Nature communications 6 (1), 7372, 2015 | 203 | 2015 |
| Rotation-misfit-free heteroepitaxial stacking and stitching growth of hexagonal transition-metal dichalcogenide monolayers by nucleation kinetics controls. H Heo, JH Sung, G Jin, JH Ahn, K Kim, MJ Lee, S Cha, H Choi, MH Jo Advanced Materials (Deerfield Beach, Fla.) 27 (25), 3803-3810, 2015 | 157 | 2015 |
| Understanding tunneling electroresistance effect through potential profile in Pt/Hf0. 5Zr0. 5O2/TiN ferroelectric tunnel junction memory J Yoon, S Hong, YW Song, JH Ahn, SE Ahn Applied Physics Letters 115 (15), 2019 | 73 | 2019 |
| Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition W Jeon, Y Cho, S Jo, JH Ahn, SJ Jeong Advanced Materials, 2017 | 73 | 2017 |
| Self‐formed channel devices based on vertically grown 2D materials with large‐surface‐area and their potential for chemical sensor applications C Kim, JC Park, SY Choi, Y Kim, SY Seo, TE Park, SH Kwon, B Cho, ... Small 14 (15), 1704116, 2018 | 68 | 2018 |
| Step coverage modeling of thin films in atomic layer deposition JY Kim, JH Ahn, SW Kang, JH Kim Journal of applied physics 101 (7), 2007 | 55 | 2007 |
| Synthesis mechanism of MoS2 layered crystals by chemical vapor deposition using MoO3 and sulfur powders CM Hyun, JH Choi, SW Lee, JH Park, KT Lee, JH Ahn Journal of Alloys and Compounds 765, 380-384, 2018 | 53 | 2018 |
| Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing E Lee, TH Kim, SW Lee, JH Kim, J Kim, TG Jeong, JH Ahn, B Cho Nano convergence 6, 1-8, 2019 | 51 | 2019 |
| Ru films from bis (ethylcyclopentadienyl) ruthenium using ozone as a reactant by atomic layer deposition for capacitor electrodes JY Kim, DS Kil, JH Kim, SH Kwon, JH Ahn, JS Roh, SK Park Journal of The Electrochemical Society 159 (6), H560, 2012 | 47 | 2012 |
| 2D materials-based membranes for hydrogen purification: Current status and future prospects E Yang, AB Alayande, K Goh, CM Kim, KH Chu, MH Hwang, JH Ahn, ... International Journal of Hydrogen Energy 46 (20), 11389-11410, 2021 | 46 | 2021 |
| Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few‐Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The … H Heo, JH Sung, JH Ahn, F Ghahari, T Taniguchi, K Watanabe, P Kim, ... Advanced Electronic Materials 3 (2), 1600375, 2017 | 37 | 2017 |
| Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes JH Ahn, JY Kim, SW Kang, JH Kim, JS Roh Applied Physics Letters 91 (6), 2007 | 36 | 2007 |
| Highly stable artificial synapses based on ferroelectric tunnel junctions for neuromorphic computing applications S Song, W Ham, G Park, W Kho, J Kim, H Hwang, HB Kim, H Song, ... Advanced Materials Technologies 7 (7), 2101323, 2022 | 35 | 2022 |
| Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode JH Ahn, SH Kwon ACS Applied Materials & Interfaces 7 (28), 15587-15592, 2015 | 35 | 2015 |
| Wafer-Scale Growth of a MoS2 Monolayer via One Cycle of Atomic Layer Deposition: An Adsorbate Control Method DH Kim, JC Park, J Park, DY Cho, WH Kim, B Shong, JH Ahn, TJ Park Chemistry of Materials 33 (11), 4099-4105, 2021 | 33 | 2021 |
| Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma DK Lee, Z Wan, JS Bae, JH Ahn, SD Kim, J Kim, SH Kwon Materials Letters 166, 163-166, 2016 | 33 | 2016 |
| Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing HB Kim, M Jung, Y Oh, SW Lee, D Suh, JH Ahn Nanoscale 13 (18), 8524-8530, 2021 | 31 | 2021 |
| Highly transparent and conductive oxide-metal-oxide electrodes optimized at the percolation thickness of AgOx for transparent silicon thin-film solar cells H Jo, JH Yang, SW Choi, J Park, EJ Song, M Shin, JH Ahn, JD Kwon Solar Energy Materials and Solar Cells 202, 110131, 2019 | 31 | 2019 |
Myoung-Jae LeeDaegu Gyeongubuk Institute of Science & Technology (DGIST)Vahvistettu sähköpostiosoite verkkotunnuksessa dgist.ac.kr