| Effect of program error in memristive neural network with weight quantization TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022 | 24 | 2022 |
| Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices MC Nguyen, K Lee, S Kim, S Youn, Y Hwang, H Kim, R Choi, D Kwon IEEE Electron Device Letters 43 (1), 17-20, 2021 | 22 | 2021 |
| Intrinsic variation effect in memristive neural network with weight quantization J Park, MS Song, S Youn, TH Kim, S Kim, K Hong, H Kim Nanotechnology 33 (37), 375203, 2022 | 18 | 2022 |
| Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization J Park, S Kim, MS Song, S Youn, K Kim, TH Kim, H Kim ACS applied materials & interfaces 16 (1), 1054-1065, 2024 | 17 | 2024 |
| Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation S Youn, S Kim, TH Kim, J Park, H Kim Advanced Intelligent Systems, 2200325, 2023 | 12 | 2023 |
| Highly reliable physical unclonable functions using memristor crossbar with tunneling conduction J Park, TH Kim, S Kim, MS Song, S Youn, K Hong, BG Park, H Kim 2022 International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2022 | 9 | 2022 |
| Programmable threshold logic implementations in a memristor crossbar array S Youn, J Lee, S Kim, J Park, K Kim, H Kim Nano Letters 24 (12), 3581-3589, 2024 | 8 | 2024 |
| Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application A Kumar, M Krishnaiah, J Park, D Mishra, B Dash, HB Jo, G Lee, S Youn, ... Advanced Functional Materials 34 (16), 2310780, 2024 | 7 | 2024 |
| Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices GH Lee, TH Kim, S Youn, J Park, S Kim, H Kim Chaos, Solitons & Fractals 170, 113359, 2023 | 7 | 2023 |
| Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors S Park, S Youn, JT Jang, H Kim, DH Kim Crystals 12 (5), 594, 2022 | 7 | 2022 |
| Fuse devices for pruning in memristive neural network TH Kim, K Hong, S Kim, J Park, S Youn, JH Lee, BG Park, H Kim, WY Choi IEEE Electron Device Letters 44 (3), 520-523, 2023 | 5 | 2023 |
| True random number generator using memcapacitor with charge trapping layer H Hwang, MS Song, S Youn, H Kim IEEE Electron Device Letters, 2024 | 4 | 2024 |
| Memristor Crossbar Array with Enhanced Device Yield for In-Memory Vector–Matrix Multiplication TH Kim, S Kim, J Park, S Youn, H Kim ACS Applied Electronic Materials 6 (6), 4099-4107, 2024 | 3 | 2024 |
| 2C‐Ternary Content Addressable Memory in Memcapacitor Crossbar Array with NAND Flash Structure H Hwang, J Yu, S Youn, WY Choi, H Kim Small, 2408618, 2025 | | 2025 |
| True random number generator using stochastic noise signal of memristor with variation tolerance D Yu, S Ahn, S Youn, J Park, H Kim Chaos, Solitons & Fractals 189, 115708, 2024 | | 2024 |
| Threshold learning algorithm for memristive neural network with binary switching behavior S Youn, Y Hwang, TH Kim, S Kim, H Hwang, J Park, H Kim Neural Networks 176, 106355, 2024 | | 2024 |
| Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System S Kim, K Park, K Hong, TH Kim, J Park, S Youn, H Kim, WY Choi Advanced Materials Technologies 9 (11), 2400063, 2024 | | 2024 |
| Boundary Binary Neural Network For Advanced On-chip Learning In Neuromorphic System Y Hwang, S Youn, H Kim 한국차세대컴퓨팅학회 학술대회, 348-350, 2021 | | 2021 |
Hyungjin KimAssociate Professor, Hanyang UniversityVahvistettu sähköpostiosoite verkkotunnuksessa hanyang.ac.kr