Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 2016
387 2016 β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
356 2022 The effects of CdCl2 on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells SA Ringel, AW Smith, MH MacDougal, A Rohatgi
Journal of applied physics 70 (2), 881-889, 1991
257 1991 Impact of carbon on trap states in n -type GaN grown by metalorganic chemical vapor deposition A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ...
Applied Physics Letters 84 (3), 374-376, 2004
230 2004 Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy TJ Grassman, MR Brenner, S Rajagopalan, R Unocic, R Dehoff, M Mills, ...
Applied Physics Letters 94 (23), 2009
207 2009 Influence of metal choice on (010) β-Ga2O3 Schottky diode properties E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 2017
203 2017 Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel
Journal of Applied physics 98 (5), 2005
203 2005 Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage MR Lueck, CL Andre, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
IEEE Electron Device Letters 27 (3), 142-144, 2006
185 2006 Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
175 2002 2 O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHzZ Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
171 2019 Impact of dislocation densities on n+∕ p and p+∕ n junction GaAs diodes and solar cells on SiGe virtual substrates CL Andre, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
Journal of applied physics 98 (1), 2005
171 2005 Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes A Hierro, D Kwon, SA Ringel, M Hansen, JS Speck, UK Mishra, ...
Applied Physics Letters 76 (21), 3064-3066, 2000
171 2000 Hydrogen passivation of deep levels in A Hierro, SA Ringel, M Hansen, JS Speck, UK Mishra, SP DenBaars
Applied Physics Letters 77 (10), 1499-1501, 2000
163 2000 Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion RM Sieg, SA Ringel, SM Ting, EA Fitzgerald, RN Sacks
Journal of electronic materials 27, 900-907, 1998
153 1998 Nucleation-related defect-free GaP/Si (100) heteroepitaxy via metal-organic chemical vapor deposition TJ Grassman, JA Carlin, B Galiana, LM Yang, F Yang, MJ Mills, SA Ringel
Applied Physics Letters 102 (14), 2013
151 2013 Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
148 2019 Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
148 2019 Toward device-quality GaAs growth by molecular beam epitaxy on offcut RM Sieg, SA Ringel, SM Ting, SB Samavedam, M Currie, T Langdo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
138 1998 Effect of threading dislocation density on Ni∕ n-GaN Schottky diode IV characteristics AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel
Journal of applied physics 100 (2), 2006
134 2006 Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates JA Carlin, SA Ringel, EA Fitzgerald, M Bulsara, BM Keyes
Applied Physics Letters 76 (14), 1884-1886, 2000
133 2000 