Seuraa
Michael Manfra
Michael Manfra
Purdue University
Vahvistettu sähköpostiosoite verkkotunnuksessa purdue.edu - Kotisivu
Nimike
Viittaukset
Viittaukset
Vuosi
Scaling of Majorana zero-bias conductance peaks
F Nichele, ACC Drachmann, AM Whiticar, ECT O’Farrell, HJ Suominen, ...
Physical Review Letters 119 (13), 136803, 2017
4842017
Direct observation of anyonic braiding statistics
J Nakamura, S Liang, G G.C., MJ Manfra
Nature Physics 16, 931-936, 2020
4652020
Evidence of topological superconductivity in planar Josephson junctions
A Fornieri, AM Whiticar, F Setiawan, E Portolés, ACC Drachmann, ...
Nature 569, 89-92, 2019
4142019
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
JWP Hsu, MJ Manfra, DV Lang, S Richter, SNG Chu, AM Sergent, ...
Applied Physics Letters 78 (12), 1685-1687, 2001
3872001
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
JWP Hsu, MJ Manfra, RJ Molnar, B Heying, JS Speck
Applied Physics Letters 81 (1), 79-81, 2002
3752002
Supercurrent rectification and magnetochiral effects in symmetric Josephson junctions
C Baumgartner, L Fuchs, A Costa, S Reinhardt, S Gronin, GC Gardner, ...
Nature Nanotechnology 17, 39-44, 2021
3162021
Cryogenic control architecture for large-scale quantum computing
JM Hornibrook, JI Colless, ID Conway Lamb, SJ Pauka, H Lu, ...
Physical Review Applied 3 (2), 024010, 2015
3012015
Noise suppression using symmetric exchange gates in spin qubits
F Martins, FK Malinowski, PD Nissen, E Barnes, S Fallahi, GC Gardner, ...
Physical Review Letters 116 (11), 116801, 2016
2732016
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
O Mitrofanov, M Manfra
Journal of Applied Physics 95 (11), 6414-6419, 2004
2622004
Superconducting gatemon qubit based on a proximitized two-dimensional electron gas
L Casparis, MR Connolly, M Kjaergaard, NJ Pearson, A Kringhøj, ...
Nature Nanotechnology 13, 915-919, 2018
2472018
Collective non-perturbative coupling of 2D electrons with high-quality-factor terahertz cavity photons
Q Zhang, M Lou, X Li, JL Reno, W Pan, JD Watson, MJ Manfra, J Kono
Nature Physics 12 (11), 1005-1011, 2016
2442016
High-fidelity entangling gate for double-quantum-dot spin qubits
JM Nichol, LA Orona, SP Harvey, S Fallahi, GC Gardner, MJ Manfra, ...
npj Quantum Information 3 (1), 3, 2017
235*2017
A cryogenic CMOS chip for generating control signals for multiple qubits
SJ Pauka, K Das, R Kalra, A Moini, Y Yang, M Trainer, A Bousquet, ...
Nature Electronics 4, 64-70, 2021
232*2021
Nonconventional Odd-denominator Fractional Quantum Hall States in the Second Landau Level
A Kumar, GA Csáthy, MJ Manfra, LN Pfeiffer, KW West
Physical Review Letters 105 (24), 246808, 2010
2222010
Topological superconductivity in hybrid devices
SM Frolov, MJ Manfra, JD Sau
Nature Physics 16, 718-724, 2020
2082020
Molecular beam epitaxy of ultra-high quality AlGaAs/GaAs heterostructures: Enabling physics in low-dimensional electronic systems
MJ Manfra
Annu. Rev. Condens. Matter Phys. 5, 347-73, 2014
2032014
Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors
O Mitrofanov, M Manfra
Superlattices and Microstructures 34 (1-2), 33-53, 2003
1972003
Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides
SA Jewett, MS Makowski, B Andrews, A Ivanisevic, MJ Manfra
Acta Biomaterialia 8, 728-733, 2012
1742012
InAs-Al hybrid devices passing the topological gap protocol
M Aghaee, A Akkala, Z Alam, R Ali, A Alcaraz Ramirez, M Andrzejczuk, ...
Physical Review B 107 (24), 245423, 2023
1712023
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
JWP Hsu, MJ Manfra, SNG Chu, CH Chen, LN Pfeiffer, RJ Molnar
Applied Physics Letters 78 (25), 3980-3982, 2001
1642001
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Artikkelit 1–20