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Saptarshi Das
Saptarshi Das
Ackley Professor of Engineering, Pennsylvania State University
Vahvistettu sähköpostiosoite verkkotunnuksessa psu.edu
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Vuosi
High Performance Multi-layer MoS2 Transistors with Scandium Contacts
S Das, HY Chen, AV Penumatcha, J Appenzeller
Nano Letters 13 (1), 100-105, 2013
28002013
Recent advances in two-dimensional materials beyond graphene
GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha, S Das, D Xiao, Y Son, ...
ACS Nano 9 (12), 11509-11539, 2015
27362015
Tunable transport gap in phosphorene
S Das, W Zhang, M Demarteau, A Hoffmann, M Dubey, A Roelofs
Nano letters 14 (10), 5733-5739, 2014
8172014
Contact engineering for 2D materials and devices
DS Schulman, AJ Arnold, S Das
Chemical Society Reviews 47 (9), 3037-3058, 2018
8022018
Beyond graphene: progress in novel two-dimensional materials and van der Waals solids
S Das, JA Robinson, M Dubey, H Terrones, M Terrones
Annual Review of Materials Research 45 (1), 1-27, 2015
7432015
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
6532021
WSe2 field effect transistors with enhanced ambipolar characteristics
S Das, J Appenzeller
Applied physics letters 103 (10), 2013
4932013
All two-dimensional, flexible, transparent, and thinnest thin film transistor
S Das, R Gulotty, AV Sumant, A Roelofs
Nano letters 14 (5), 2861-2866, 2014
4702014
Ambipolar Phosphorene Field Effect Transistor
S Das, M Demarteau, A Roelofs
ACS Nano 8 (11), 11730-11738, 2014
4622014
Benchmarking monolayer MoS2 and WS2 field-effect transistors
A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das
Nature Communications 12 (1), 693, 2021
4352021
Where Does the Current Flow in Two-Dimensional Layered Systems?
S Das, J Appenzeller
Nano Letters 13 (7), 3396–3402, 2013
3132013
A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
2842019
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das
ACS Nano 11 (3), 3110-3118, 2017
2792017
Towards Low Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides
S Das, A Prakash, R Salazar, J Appenzeller
ACS Nano 8 (2), 1681-89, 2014
2192014
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire
M Chubarov, TH Choudhury, DR Hickey, S Bachu, T Zhang, A Sebastian, ...
ACS Nano, 2021
2142021
Screening and interlayer coupling in multilayer MoS2
S Das, J Appenzeller
physica status solidi (RRL)-Rapid Research Letters 7 (4), 268-273, 2013
1962013
A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector
D Jayachandran, A Oberoi, A Sebastian, TH Choudhury, B Shankar, ...
Nature Electronics 3 (10), 646-655, 2020
1952020
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport
F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ...
Science Advances 5 (5), eaav5003, 2019
1782019
Origin of the turn-on temperature behavior in WTe 2
YL Wang, LR Thoutam, ZL Xiao, J Hu, S Das, ZQ Mao, J Wei, R Divan, ...
Physical Review B 92 (18), 180402, 2015
1772015
Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor
F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ...
Advanced Science 7 (24), 2001174, 2020
1592020
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Artikkelit 1–20