Artikkelit, joihin on yleisen käytön mandaatti - Tianyi ZhangLisätietoja
Ei saatavilla missään: 12
Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis
T Zhang, K Fujisawa, F Zhang, M Liu, MC Lucking, RN Gontijo, Y Lei, ...
ACS nano 14 (4), 4326-4335, 2020
Mandaatit: US National Science Foundation, US Department of Defense
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers
X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ...
ACS nano 13 (3), 3341-3352, 2019
Mandaatit: US National Science Foundation, US Department of Defense
Quantification and healing of defects in atomically thin molybdenum disulfide: beyond the controlled creation of atomic defects
K Fujisawa, BR Carvalho, T Zhang, N Perea-Lopez, Z Lin, V Carozo, ...
ACS nano 15 (6), 9658-9669, 2021
Mandaatit: US Department of Defense
Clean transfer of 2D transition metal dichalcogenides using cellulose acetate for atomic resolution characterizations
T Zhang, K Fujisawa, T Granzier-Nakajima, F Zhang, Z Lin, E Kahn, ...
ACS Applied Nano Materials 2 (8), 5320-5328, 2019
Mandaatit: US National Science Foundation, US Department of Defense
Electrochemical polishing of two-dimensional materials
A Sebastian, F Zhang, A Dodda, D May-Rawding, H Liu, T Zhang, ...
ACS nano 13 (1), 78-86, 2018
Mandaatit: US National Science Foundation, US Department of Defense
Vapour-phase deposition of two-dimensional layered chalcogenides
T Zhang, J Wang, P Wu, AY Lu, J Kong
Nature Reviews Materials 8 (12), 799-821, 2023
Mandaatit: US Department of Energy
Second-and third-order optical susceptibilities across excitons states in 2D monolayer transition metal dichalcogenides
L Lafeta, A Corradi, T Zhang, E Kahn, I Bilgin, BR Carvalho, S Kar, ...
2D Materials 8 (3), 035010, 2021
Mandaatit: US National Science Foundation
2D materials for universal thermal imaging of micro-and nanodevices: An application to gallium oxide electronics
JS Lundh, T Zhang, Y Zhang, Z Xia, M Wetherington, Y Lei, E Kahn, ...
ACS Applied Electronic Materials 2 (9), 2945-2953, 2020
Mandaatit: US National Science Foundation, US Department of Defense
Cascaded compression of size distribution of nanopores in monolayer graphene
J Wang, C Cheng, X Zheng, JC Idrobo, AY Lu, JH Park, BG Shin, SJ Jung, ...
Nature 623 (7989), 956-963, 2023
Mandaatit: US Department of Energy, US Department of Defense, Australian Research Council
Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS2 and WS2 via Proton Irradiation
B Ozden, T Zhang, M Liu, A Fest, DA Pearson, E Khan, S Uprety, ...
ACS nano 17 (24), 25101-25117, 2023
Mandaatit: US National Science Foundation
Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition
H Liu, T Zhang, P Wu, HW Lee, Z Liu, TW Tang, SY Tang, T Kang, JH Park, ...
Nano Letters 24 (27), 8277-8286, 2024
Mandaatit: Research Grants Council, Hong Kong
Low‐Temperature Vapor‐Phase Growth of 2D Metal Chalcogenides
K Zhang, T Zhang, J You, X Zheng, M Zhao, L Zhang, J Kong, Z Luo, ...
Small 20 (19), 2307587, 2024
Mandaatit: Research Grants Council, Hong Kong
Saatavilla jossain: 47
Tunable Fano Resonance and Plasmon–Exciton Coupling in Single Au Nanotriangles on Monolayer WS2 at Room Temperature
M Wang, A Krasnok, T Zhang, L Scarabelli, H Liu, Z Wu, LM Liz‐Marzán, ...
Advanced Materials 30 (22), 1705779, 2018
Mandaatit: US National Science Foundation, US Department of Defense, Government of Spain
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire
M Chubarov, TH Choudhury, DR Hickey, S Bachu, T Zhang, A Sebastian, ...
ACS nano 15 (2), 2532-2541, 2021
Mandaatit: US National Science Foundation, US Department of Defense
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport
F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ...
Science advances 5 (5), eaav5003, 2019
Mandaatit: US Department of Energy, US Department of Defense
Angstrom-Size Defect Creation and Ionic Transport through Pores in Single-Layer MoS2
JP Thiruraman, K Fujisawa, G Danda, PM Das, T Zhang, A Bolotsky, ...
Nano letters 18 (3), 1651-1659, 2018
Mandaatit: US National Science Foundation, US Department of Defense, US National …
Monolayer vanadium‐doped tungsten disulfide: a room‐temperature dilute magnetic semiconductor
F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ...
Advanced Science 7 (24), 2001174, 2020
Mandaatit: US National Science Foundation, US Department of Energy, US Department of …
Monolayer WS2 Nanopores for DNA Translocation with Light-Adjustable Sizes
G Danda, P Masih Das, YC Chou, JT Mlack, WM Parkin, CH Naylor, ...
ACS nano 11 (2), 1937-1945, 2017
Mandaatit: US National Science Foundation, US National Institutes of Health
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform
J Zhu, JH Park, SA Vitale, W Ge, GS Jung, J Wang, M Mohamed, T Zhang, ...
Nature Nanotechnology 18 (5), 456-463, 2023
Mandaatit: US National Science Foundation, US Department of Energy, US Department of …
Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices
Y Lei, T Zhang, YC Lin, T Granzier-Nakajima, G Bepete, DA Kowalczyk, ...
ACS Nanoscience Au 2 (6), 450-485, 2022
Mandaatit: US National Science Foundation, US Department of Defense, Australian …
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