| Semiconductor light emitting device SJ Kim, Y Ryu, T Park, TS Jang US Patent US20140217448A1, 2014 | 88 | 2014 |
| 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim Advanced Intelligent Systems 4 (9), 2100273, 2022 | 54 | 2022 |
| Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim Chaos, Solitons & Fractals 153, 111587, 2021 | 52 | 2021 |
| Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM S Kim, TH Kim, H Kim, BG Park Applied Physics Letters 117 (20), 2020 | 46 | 2020 |
| Semiconductor light emitting device SJ Kim, YH Ryu, MW Choi US Patent US9786817B2, 2017 | 40 | 2017 |
| 3-bit multilevel operation with accurate programming scheme in tio x/al2o3 memristor crossbar array for quantized neuromorphic system TH Kim, J Lee, S Kim, J Park, BG Park, H Kim Nanotechnology 32 (29), 295201, 2021 | 36 | 2021 |
| Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors J Park, TH Kim, S Kim, GH Lee, H Nili, H Kim Chaos, Solitons & Fractals 152, 111388, 2021 | 26 | 2021 |
| Effect of program error in memristive neural network with weight quantization TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022 | 24 | 2022 |
| Synaptic characteristics and vector‐matrix multiplication operation in highly uniform and cost‐effective four‐layer vertical RRAM array J Kim, S Lee, S Kim, S Yang, JK Lee, TH Kim, M Ismail, C Mahata, Y Kim, ... Advanced Functional Materials 34 (8), 2310193, 2024 | 23 | 2024 |
| Intrinsic variation effect in memristive neural network with weight quantization J Park, MS Song, S Youn, TH Kim, S Kim, K Hong, H Kim Nanotechnology 33 (37), 375203, 2022 | 18 | 2022 |
| Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization J Park, S Kim, MS Song, S Youn, K Kim, TH Kim, H Kim ACS applied materials & interfaces 16 (1), 1054-1065, 2024 | 17 | 2024 |
| Effect of weight overlap region on neuromorphic system with memristive synaptic devices GH Lee, TH Kim, MS Song, J Park, S Kim, K Hong, Y Kim, BG Park, H Kim Chaos, Solitons & Fractals 157, 111999, 2022 | 15 | 2022 |
| Demonstration of synaptic characteristics in VRRAM with TiN nanocrystals for neuromorphic system S Yang, T Kim, S Kim, S Kim, TH Kim, M Ismail, C Mahata, S Kim, S Cho Advanced Materials Interfaces 10 (21), 2300290, 2023 | 14 | 2023 |
| Realization of multiple synapse plasticity by coexistence of volatile and nonvolatile characteristics of interface type memristor D Ju, S Kim, K Park, J Lee, M Koo, S Kim ACS Applied Materials & Interfaces 16 (19), 24929-24942, 2024 | 13 | 2024 |
| Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation S Youn, S Kim, TH Kim, J Park, H Kim Advanced Intelligent Systems 5 (3), 2200325, 2023 | 12 | 2023 |
| Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications Y Cho, J Heo, S Kim, S Kim Surfaces and Interfaces 41, 103273, 2023 | 11 | 2023 |
| Electric-field-induced metal filament formation in cobalt-based CBRAM observed by TEM YJ Choi, S Bang, TH Kim, K Hong, S Kim, S Kim, BG Park, WY Choi ACS Applied Electronic Materials 5 (3), 1834-1843, 2023 | 10 | 2023 |
| Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems S Yang, T Kim, S Kim, D Chung, TH Kim, JK Lee, S Kim, M Ismail, ... Nanoscale 15 (32), 13239-13251, 2023 | 10 | 2023 |
| Highly reliable physical unclonable functions using memristor crossbar with tunneling conduction J Park, TH Kim, S Kim, MS Song, S Youn, K Hong, BG Park, H Kim 2022 International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2022 | 9 | 2022 |
| Programmable threshold logic implementations in a memristor crossbar array S Youn, J Lee, S Kim, J Park, K Kim, H Kim Nano Letters 24 (12), 3581-3589, 2024 | 8 | 2024 |
Tae-Hyeon KimSeoul National University of Science and Tehcnology, Assistant ProfessorVahvistettu sähköpostiosoite verkkotunnuksessa seoultech.ac.kr
