Artikkelit, joihin on yleisen käytön mandaatti - Lili YuLisätietoja
Ei saatavilla missään: 3
High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes
Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Letters 38 (2), 248-251, 2016
Mandaatit: US Department of Energy
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
Mandaatit: US Department of Energy
High-yield large area MoS2 technology: Material, device and circuits co-optimization
L Yu, D El-Damak, U Radhakrishna, A Zubair, D Piedra, X Ling, Y Lin, ...
2016 IEEE International Electron Devices Meeting (IEDM), 5.7. 1-5.7. 4, 2016
Mandaatit: US National Science Foundation
Saatavilla jossain: 4
Dielectric Screening of Excitons and Trions in Single-Layer MoS2
Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ...
Nano letters 14 (10), 5569-5576, 2014
Mandaatit: US Department of Energy
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ...
Nano letters 16 (10), 6349-6356, 2016
Mandaatit: US National Science Foundation
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
IEEE, 2015
Mandaatit: US Department of Energy
Design space and origin of off-state leakage in GaN vertical power diodes
Y Zhang, HY Wong, M Sun, S Joglekar, L Yu, NA Braga, RV Mickevicius, ...
2015 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2015
Mandaatit: US Department of Energy
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