Seuraa
Morteza Gholipour
Nimike
Viittaukset
Viittaukset
Vuosi
A SPICE-compatible model of MOS-type graphene nano-ribbon field-effect transistors enabling gate-and circuit-level delay and power analysis under process variation
YY Chen, A Sangai, A Rogachev, M Gholipour, G Iannaccone, G Fiori, ...
IEEE Transactions on Nanotechnology 14 (6), 1068-1082, 2015
942015
Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs with performance analysis
M Gholipour, YY Chen, A Sangai, N Masoumi, D Chen
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (2), 650-663, 2015
672015
Highly accurate SPICE-compatible modeling for single-and double-gate GNRFETs with studies on technology scaling
M Gholipour, YY Chen, A Sangai, D Chen
2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2014
662014
A reliable low standby power 10T SRAM cell with expanded static noise margins
E Abbasian, F Izadinasab, M Gholipour
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (4), 1606-1616, 2022
602022
Graphene nano-ribbon field-effect transistors as future low-power devices
YY Chen, A Sangai, M Gholipour, D Chen
International Symposium on Low Power Electronics and Design (ISLPED), 151-156, 2013
432013
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
E Abbasian, M Gholipour
Journal of Computational Electronics 19, 987-1001, 2020
372020
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
E Abbasian, S Birla, M Gholipour
Microelectronics Journal 123, 105427, 2022
342022
Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications
E Abbasian, M Gholipour
AEU-International Journal of Electronics and Communications 138, 153899, 2021
342021
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
E Abbasian, M Gholipour, S Birla
Arabian Journal for Science and Engineering 47 (11), 14543-14559, 2022
312022
Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications
E Abbasian, M Gholipour
International Journal of Circuit Theory and Applications 49 (4), 970-989, 2021
312021
Schottky-barrier-type graphene nano-ribbon field-effect transistors: A study on compact modeling, process variation, and circuit performance
YY Chen, A Sangai, M Gholipour, D Chen
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013
302013
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
E Abbasian, E Mani, M Gholipour, M Karamimanesh, M Sahid, A Zaidi
Circuits, Systems, and Signal Processing 41 (6), 3081-3105, 2022
272022
Asymmetric gate Schottky-barrier graphene nanoribbon FETs for low-power design
M Gholipour, N Masoumi, YYC Chen, D Chen, M Pourfath
IEEE Transactions on Electron Devices 61 (12), 4000-4006, 2014
272014
A comprehensive analysis of different SRAM cell topologies in 7-nm FinFET technology
E Abbasian, S Birla, M Gholipour
Silicon, 1-12, 2021
262021
Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures
M Gholipour, N Masoumi
Microelectronics Journal 44 (3), 190-200, 2013
242013
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design
E Abbasian, M Gholipour, F Izadinasab
International Journal of Circuit Theory and Applications 49 (11), 3630-3652, 2021
232021
Design space exploration of low-power flip-flops in FinFET technology
E Mahmoodi, M Gholipour
Integration 75, 52-62, 2020
212020
Design of a highly stable and robust 10T SRAM cell for low-power portable applications
E Abbasian, M Gholipour
Circuits, Systems, and Signal Processing 41 (10), 5914-5932, 2022
202022
A low‐leakage single‐bitline 9T SRAM cell with read‐disturbance removal and high writability for low‐power biomedical applications
E Abbasian, M Gholipour
International Journal of Circuit Theory and Applications 50 (5), 1537-1556, 2022
172022
A compact short-channel model for symmetric double-gate TMDFET in subthreshold region
M Gholipour
IEEE Transactions on Electron Devices 64 (8), 3466-3469, 2017
172017
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Artikkelit 1–20