Paul Fons

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Coauteurs

Александр Владимирович Колобов (...РГПУ им. А.И. ГерценаAdresse e-mail validée de herzen.spb.ru
Kakuya IwataNational institute of Advanced Industrial Science and Technology (AIST)Adresse e-mail validée de aist.go.jp
Yuta SaitoProfessor, Tohoku UniversityAdresse e-mail validée de tohoku.ac.jp
milos krbalSenior researcher, CEMNAT, University of PardubiceAdresse e-mail validée de upce.cz
Muneaki HaseDepartment of Applied Physics, University of TsukubaAdresse e-mail validée de u.tsukuba.ac.jp
Robert E SimpsonUniversity of BrminghamAdresse e-mail validée de bham.ac.uk
SAKURAI KeiichiroNational Institute of Advanced Industrial Science and Technology (AIST)Adresse e-mail validée de aist.go.jp
Kirill MitrofanovOISTAdresse e-mail validée de oist.jp
Makino KotaroNational Institute of Advanced Industrial Science and TechnologyAdresse e-mail validée de aist.go.jp
Raffaella CalarcoCNR-IMMAdresse e-mail validée de cnr.it
Anatoly I. FrenkelStony Brook UniversityAdresse e-mail validée de stonybrook.edu
Takashi YagiNational Institute of Advanced Industrial Science and TechnologyAdresse e-mail validée de aist.go.jp
Alessandro GiussaniSilanna SemiconductorAdresse e-mail validée de silanna.com
YI SHUANGTohoku universityAdresse e-mail validée de dc.tohoku.ac.jp
Shuichi MurakamiProfessor of Physics, Tokyo Institute of TechnologyAdresse e-mail validée de stat.phys.titech.ac.jp
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikAdresse e-mail validée de pdi-berlin.de
Spyros N. YannopoulosProfessor, Department of Chemistry, University of Patras, and Research Director (FORTH/ICE-HTAdresse e-mail validée de iceht.forth.gr
Konstantinos S. AndrikopoulosPhysics Dpt., University of Patras & ICEHT/FORTHAdresse e-mail validée de iceht.forth.gr
Joe GreeneProfessor of Materials Science and Physics, University of IllinoisAdresse e-mail validée de uiuc.edu
Motohiro SuzukiKwansei Gakuin UniversityAdresse e-mail validée de kwansei.ac.jp

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Paul Fons

Professor at Keio University

Adresse e-mail validée de keio.jp

Materials Science Phase-change materials X-ray absorption Density-functional theory Ultra-fast structural techniques


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Understanding the phase-change mechanism of rewritable optical media AV Kolobov, P Fons, AI Frenkel, AL Ankudinov, J Tominaga, T Uruga Nature materials 3 (10), 703-708, 2004	1631	2004
Interfacial phase-change memory RE Simpson, P Fons, AV Kolobov, T Fukaya, M Krbal, T Yagi, J Tominaga Nature nanotechnology 6 (8), 501-505, 2011	845	2011
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki Thin Solid Films 431, 369-372, 2003	356	2003
Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅ RE Simpson, M Krbal, P Fons, AV Kolobov, J Tominaga, T Uruga, ... Nano letters 10 (2), 414-419, 2010	281	2010
Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ... Applied Physics Letters 77 (12), 1801-1803, 2000	272	2000
Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara Journal of Crystal Growth 201, 627-632, 1999	255	1999
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy AV Kolobov, M Krbal, P Fons, J Tominaga, T Uruga Nature chemistry 3 (4), 311-316, 2011	232	2011
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki Journal of Crystal Growth 209 (2-3), 526-531, 2000	230	2000
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials KS Andrikopoulos, SN Yannopoulos, AV Kolobov, P Fons, J Tominaga Journal of Physics and Chemistry of Solids 68 (5-6), 1074-1078, 2007	222	2007
Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb ₂ Te ₃ Superlattices J Tominaga, AV Kolobov, P Fons, T Nakano, S Murakami Advanced Materials Interfaces 1 (1), 1300027-1300027, 2014	202	2014
Na-induced variations in the structural, optical, and electrical properties of Cu (In, Ga) Se2 thin films S Ishizuka, A Yamada, MM Islam, H Shibata, P Fons, T Sakurai, K Akimoto, ... Journal of applied physics 106 (3), 2009	198	2009
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Applied physics letters 79 (25), 4139-4141, 2001	191	2001
Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2 S Chichibu, T Mizutani, K Murakami, T Shioda, T Kurafuji, H Nakanishi, ... Journal of Applied Physics 83 (7), 3678-3689, 1998	189	1998
ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ... Journal of Crystal Growth 214, 50-54, 2000	172	2000
Direct Observation of Nitrogen Location in Molecular Beam Epitaxy Grown<? format?> Nitrogen-Doped ZnO P Fons, H Tampo, AV Kolobov, M Ohkubo, S Niki, J Tominaga, R Carboni, ... Physical review letters 96 (4), 045504, 2006	169	2006
Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures H Tampo, H Shibata, K Maejima, A Yamada, K Matsubara, P Fons, ... Applied Physics Letters 93 (20), 2008	167	2008
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ... Solar energy materials and solar cells 87 (1-4), 541-548, 2005	163	2005
Band-gap modified Al-doped Zn1− xMgxO transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki Applied physics letters 85 (8), 1374-1376, 2004	159	2004
Local structure of crystallized GeTe films AV Kolobov, J Tominaga, P Fons, T Uruga Applied physics letters 82 (3), 382-384, 2003	154	2003
Two-dimensional electron gas in Zn polar ZnMgO∕ ZnO heterostructures grown by radical source molecular beam epitaxy H Tampo, H Shibata, K Matsubara, A Yamada, P Fons, S Niki, ... Applied physics letters 89 (13), 2006	145	2006

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