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Hong-Sub Lee
Hong-Sub Lee
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University
Adresse e-mail validée de khu.ac.kr - Page d'accueil
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Année
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
VK Sangwan*, HS Lee*, H Bergeron, I Balla, ME Beck, KS Chen, ...
Nature 554 (7693), 500, 2018
9362018
Dual‐Gated MoS2 Memtransistor Crossbar Array
HS Lee, VK Sangwan, WAG Rojas, H Bergeron, HY Jeong, J Yuan, K Su, ...
Advanced Functional Materials 30 (45), 2003683, 2020
1342020
A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3
HS Lee, SG Choi, HH Park, MJ Rozenberg
Scientific reports 3 (1), 1704, 2013
1022013
Mott-transition-based RRAM
Y Wang, KM Kang, M Kim, HS Lee, R Waser, D Wouters, R Dittmann, ...
Materials today 28, 63-80, 2019
812019
Solution-processed layered gallium telluride thin-film photodetectors
J Kang, VK Sangwan, HS Lee, X Liu, MC Hersam
ACS Photonics 5 (10), 3996-4002, 2018
722018
Improved Performance of Organic Light Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition
YJ Choi, SC Gong, CS Park, HS Lee, JG Jang, HJ Chang, GY Yeom, ...
ACS applied materials & interfaces, 2013
682013
Sodium‐doped titania self‐rectifying memristors for crossbar array neuromorphic architectures
SE Kim, JG Lee, L Ling, SE Liu, HK Lim, VK Sangwan, MC Hersam, ...
Advanced Materials 34 (6), 2106913, 2022
582022
Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware
M Kim, MA Rehman, D Lee, Y Wang, DH Lim, MF Khan, H Choi, QY Shao, ...
ACS applied materials & interfaces 14 (39), 44561-44571, 2022
552022
Reconfigurable MoS2 Memtransistors for Continuous Learning in Spiking Neural Networks
J Yuan, SE Liu, A Shylendra, WA Gaviria Rojas, S Guo, H Bergeron, S Li, ...
Nano letters 21 (15), 6432-6440, 2021
542021
Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron
HS Lee, HH Park
Advances in Condensed Matter Physics 2015 (1), 746475, 2015
422015
Manganite-based memristive heterojunction with tunable non-linear I–V characteristics
HS Lee, HH Park, MJ Rozenberg
Nanoscale 7 (15), 6444-6450, 2015
342015
Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0. 7Sr0. 3MnO3 thin films
HS Lee, CS Park, HH Park
Applied Physics Letters 104 (19), 2014
342014
Visualizing thermally activated memristive switching in percolating networks of solution‐processed 2D semiconductors
VK Sangwan, SV Rangnekar, J Kang, J Shen, HS Lee, D Lam, J Shen, ...
Advanced Functional Materials 31 (52), 2107385, 2021
312021
Linear and symmetric Li-based composite memristors for efficient supervised learning
SM Kim, S Kim, L Ling, SE Liu, S Jin, YM Jung, M Kim, HH Park, ...
ACS applied materials & interfaces 14 (4), 5673-5681, 2022
272022
Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures
YJ Choi, KM Kang, HS Lee, HH Park
Journal of Materials Chemistry C 3 (32), 8336-8343, 2015
252015
Ferroelectric tunnel junction for dense cross-point arrays
HS Lee, W Han, HY Chung, M Rozenberg, K Kim, Z Lee, GY Yeom, ...
ACS applied materials & interfaces 7 (40), 22348-22354, 2015
242015
Piezoelectric transducers on curved dispersive bending wave and poke-charged touch screens
H Hoshyarmanesh, N Nehzat, M Salehi, M Ghodsi, HS Lee, HH Park
Materials and Manufacturing Processes 29 (7), 870-876, 2014
192014
Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition
WS Kim, JK Yang, CK Lee, HS Lee, HH Park
Thin Solid Films 517 (2), 506-509, 2008
182008
The effect of Sr concentration on resistive switching properties of La1− xSrxMnO3 films
SG Choi, HS Lee, H Choi, SW Chung, HH Park
Thin Solid Films 529, 352-355, 2013
172013
Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
M Kim, Y Wang, D Kim, Q Shao, HS Lee, HH Park
APL Materials 10 (3), 2022
162022
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