| A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 JA Spencer, AL Mock, AG Jacobs, M Schubert, Y Zhang, MJ Tadjer Applied Physics Reviews 9 (1), 2022 | 239 | 2022 |
| Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ... Journal of physics D: applied physics 56 (9), 093001, 2023 | 82 | 2023 |
| 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension B Wang, M Xiao, J Spencer, Y Qin, K Sasaki, MJ Tadjer, Y Zhang IEEE Electron Device Letters 44 (2), 221-224, 2022 | 79 | 2022 |
| 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ... IEEE Electron Device Letters 44 (8), 1268-1271, 2023 | 49 | 2023 |
| NiO junction termination extension for high-voltage (> 3 kV) Ga2O3 devices M Xiao, B Wang, J Spencer, Y Qin, M Porter, Y Ma, Y Wang, K Sasaki, ... Applied Physics Letters 122 (18), 2023 | 31 | 2023 |
| First demonstration of vertical superjunction diode in GaN M Xiao, Y Ma, Z Du, Y Qin, K Liu, K Cheng, F Udrea, A Xie, E Beam, ... 2022 International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2022 | 26 | 2022 |
| 2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness Y Qin, M Porter, M Xiao, Z Du, H Zhang, Y Ma, J Spencer, B Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 15 | 2023 |
| Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices Y Ma, Y Qin, M Porter, J Spencer, Z Du, M Xiao, B Wang, Y Wang, ... Advanced Electronic Materials 11 (1), 2300662, 2025 | 14 | 2025 |
| 1 kV self-aligned vertical GaN superjunction diode Y Ma, M Porter, Y Qin, J Spencer, Z Du, M Xiao, Y Wang, I Kravchenko, ... IEEE Electron Device Letters, 2023 | 14 | 2023 |
| Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3: N with high mobility JA Spencer, MJ Tadjer, AG Jacobs, MA Mastro, JL Lyons, JA Freitas, ... Applied Physics Letters 121 (19), 2022 | 14 | 2022 |
| Coherent acoustic phonons and ultrafast carrier dynamics in hetero-epitaxial BaTiO 3–BiFeO 3 films and nanorods RRHH Mudiyanselage, BA Magill, J Burton, M Miller, J Spencer, ... Journal of Materials Chemistry C 7 (45), 14212-14222, 2019 | 12 | 2019 |
| Collective phonon–polaritonic modes in silicon carbide subarrays G Lu, CR Gubbin, JR Nolen, TG Folland, K Diaz-Granados, II Kravchenko, ... ACS nano 16 (1), 963-973, 2021 | 10 | 2021 |
| NiO/β-(AlxGa1− x) 2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage> 7 kV HH Wan, JS Li, CC Chiang, X Xia, F Ren, HN Masten, JS Lundh, ... Journal of Vacuum Science & Technology A 41 (3), 2023 | 7 | 2023 |
| How to achieve low thermal resistance and high electrothermal ruggedness in Ga2O3 devices? Y Zhang, B Wang, M Xiao, J Spencer, R Zhang, J Knoll, C DiMarino, ... ECS Transactions 104 (5), 21, 2021 | 5 | 2021 |
| Operation of NiO/β-(Al0. 21Ga0. 79) 2O3/Ga2O3 heterojunction lateral rectifiers at up to 225° C HH Wan, JS Li, CC Chiang, X Xia, F Ren, HN Masten, JS Lundh, ... ECS Journal of Solid State Science and Technology 12 (7), 075008, 2023 | 4 | 2023 |
| NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed M Xiao, B Wang, R Zhang, Q Song, J Spencer, Z Du, Y Qin, K Sasaki, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 4 | 2023 |
| Nio/β-(al x ga1-x) 2o3/ga2o3 heterojunction lateral rectifiers with reverse breakdown voltage> 7kv HH Wan, JS Li, CC Chiang, X Xia, F Ren, H Masten, JS Lundh, J Spencer, ... ECS Transactions 111 (2), 85, 2023 | 4 | 2023 |
| Reduced temperature in lateral (AlxGa1− x) 2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond HN Masten, JS Lundh, TI Feygelson, K Sasaki, Z Cheng, JA Spencer, ... Applied Physics Letters 124 (15), 2024 | 3 | 2024 |
| Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation AG Jacobs, JA Spencer, JK Hite, KD Hobart, TJ Anderson, BN Feigelson physica status solidi (a) 220 (16), 2200848, 2023 | 3 | 2023 |
| Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices AG Jacobs, BN Feigelson, JA Spencer, MJ Tadjer, JK Hite, KD Hobart, ... Crystals 13 (5), 736, 2023 | 3 | 2023 |
Marko J. TadjerNaval Research LaboratoryAdresse e-mail validée de nrl.navy.mil
