| Diamond for electronics: Materials, processing and devices D Araujo, M Suzuki, F Lloret, G Alba, P Villar Materials 14 (22), 7081, 2021 | 63 | 2021 |
| Critical boron-doping levels for generation of dislocations in synthetic diamond MP Alegre, D Araujo, A Fiori, JC Pinero, F Lloret, MP Villar, P Achatz, ... Applied Physics Letters 105 (17), 2014 | 40 | 2014 |
| Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers R Rouzbahani, SS Nicley, DEP Vanpoucke, F Lloret, P Pobedinskas, ... Carbon 172, 463-473, 2021 | 31 | 2021 |
| Diamond/γ-alumina band offset determination by XPS J Cañas, G Alba, D Leinen, F Lloret, M Gutierrez, D Eon, J Pernot, ... Applied Surface Science 535, 146301, 2021 | 31 | 2021 |
| Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS J Cañas, JC Piñero, F Lloret, M Gutierrez, T Pham, J Pernot, D Araujo Applied Surface Science 461, 93-97, 2018 | 25 | 2018 |
| Influence of methane concentration on MPCVD overgrowth of 100‐oriented etched diamond substrates F Lloret, D Araujo, D Eon, M del Pilar Villar, JM Gonzalez‐Leal, ... physica status solidi (a) 213 (10), 2570-2574, 2016 | 20 | 2016 |
| Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices F Lloret, A Fiori, D Araujo, D Eon, MP Villar, E Bustarret Applied Physics Letters 108 (18), 2016 | 20 | 2016 |
| TEM study of defects versus growth orientations in heavily boron‐doped diamond F Lloret, D Araujo, MP Alegre, JM Gonzalez‐Leal, MP Villar, D Eon, ... physica status solidi (a) 212 (11), 2468-2473, 2015 | 20 | 2015 |
| Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM F Lloret, D Araújo, MP Villar, JG Rodríguez-Madrid, GF Iriarte, ... Microelectronic engineering 112, 193-197, 2013 | 16 | 2013 |
| Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth F Lloret, D Eon, E Bustarret, A Fiori, D Araujo Nanomaterials 8 (7), 480, 2018 | 15 | 2018 |
| Dislocation generation mechanisms in heavily boron-doped diamond epilayers D Araujo, F Lloret, G Alba, MP Alegre, MP Villar Applied Physics Letters 118 (5), 2021 | 13 | 2021 |
| Selectively boron doped homoepitaxial diamond growth for power device applications F Lloret, D Eon, E Bustarret, F Donatini, D Araujo Applied Physics Letters 118 (2), 2021 | 13 | 2021 |
| Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study JC Piñero, J de Vecchy, D Fernández, G Alba, J Widiez, L Di Cioccio, ... Applied Surface Science 528, 146998, 2020 | 12 | 2020 |
| MPCVD diamond lateral growth through microterraces to reduce threading dislocations density F Lloret, M Gutierrez, D Araujo, D Eon, E Bustarret physica status solidi (a) 214 (11), 1700242, 2017 | 12 | 2017 |
| Recycled hybrid material for use as shielding in operations with ionizing radiation M Suffo, JF Molina-Pérez, F Lloret Cleaner Materials 7, 100175, 2023 | 11 | 2023 |
| Improved field electron emission properties of phosphorus and nitrogen co-doped nanocrystalline diamond films F Lloret, KJ Sankaran, J Millan-Barba, D Desta, R Rouzbahani, ... Nanomaterials 10 (6), 1024, 2020 | 11 | 2020 |
| Microwave Permittivity of Trace sp2 Carbon Impurities in Sub-Micron Diamond Powders JA Cuenca, ELH Thomas, S Mandal, DJ Morgan, F Lloret, D Araujo, ... ACS omega 3 (2), 2183-2192, 2018 | 11 | 2018 |
| Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity J Millán-Barba, H Bakkali, F Lloret, M Gutiérrez, RG de Villoria, ... Applied Surface Science 615, 156382, 2023 | 8 | 2023 |
| Three-dimensional diamond MPCVD growth over MESA structures: a geometric model for growth sector configuration F Lloret, D Araujo, D Eon, E Bustarret Crystal Growth & Design 18 (12), 7628-7632, 2018 | 8 | 2018 |
| Impact of nonhomoepitaxial defects in depleted diamond MOS capacitors TT Pham, JC Piñero, A Marechal, M Gutiérrez, F Lloret, D Eon, ... IEEE Transactions on Electron Devices 65 (5), 1830-1837, 2018 | 8 | 2018 |