Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Y Kobayashi, K Kumakura, T Akasaka, T Makimoto
Nature 484 (7393), 223-227, 2012
462 2012 Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence K Kumakura, T Makimoto, N Kobayashi, T Hashizume, T Fukui, ...
Applied Physics Letters 86 (5), 2005
291 2005 Mg-acceptor activation mechanism and transport characteristics in p -type InGaN grown by metalorganic vapor phase epitaxy K Kumakura, T Makimoto, N Kobayashi
Journal of applied physics 93 (6), 3370-3375, 2003
174 2003 Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x< 0.2) K Kumakura, T Makimoto, N Kobayashi
Japanese Journal of Applied Physics 39 (4B), L337, 2000
147 2000 High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with T Makimoto, K Kumakura, N Kobayashi
Applied Physics Letters 79 (3), 380-381, 2001
101 2001 Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices K Kumakura, N Kobayashi
Japanese journal of applied physics 38 (9A), L1012, 1999
94 1999 Low-resistance nonalloyed ohmic contact to K Kumakura, T Makimoto, N Kobayashi
Applied physics letters 79 (16), 2588-2590, 2001
87 2001 High-power characteristics of GaN/InGaN double heterojunction bipolar transistors T Makimoto, Y Yamauchi, K Kumakura
Applied physics letters 84 (11), 1964-1966, 2004
83 2004 High hole concentrations in Mg-doped InGaN grown by MOVPE K Kumakura, T Makimoto, N Kobayashi
Journal of crystal growth 221 (1-4), 267-270, 2000
81 2000 Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs JY Shiu, JC Huang, V Desmaris, CT Chang, CY Lu, K Kumakura, ...
IEEE electron device letters 28 (6), 476-478, 2007
76 2007 Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN M Hiroki, K Kumakura, Y Kobayashi, T Akasaka, T Makimoto, ...
Applied Physics Letters 105 (19), 2014
73 2014 High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content K Ebata, J Nishinaka, Y Taniyasu, K Kumakura
Japanese Journal of Applied Physics 57 (4S), 04FH09, 2018
63 2018 High current gain (> 2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN T Makimoto, K Kumakura, N Kobayashi
Applied Physics Letters 83 (5), 1035-1037, 2003
62 2003 Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy K Kumakura, J Motohisa, T Fukui
Journal of crystal growth 170 (1-4), 700-704, 1997
57 1997 Novel formation method of quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy KKK Kumakura, KNK Nakakoshi, JMJ Motohisa, TFT Fukui, ...
Japanese journal of applied physics 34 (8S), 4387, 1995
57 1995 Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field K Kumakura, T Makimoto, N Kobayashi
Japanese Journal of Applied Physics 39 (4S), 2428, 2000
53 2000 Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature K Kumakura, T Makimoto, N Kobayashi
Japanese Journal of Applied Physics 39 (3A), L195, 2000
53 2000 A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN T Makimoto, K Kumakura, Y Kobayashi, T Akasaka, H Yamamoto
Applied physics express 5 (7), 072102, 2012
51 2012 Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors M Hiroki, Y Oda, N Watanabe, N Maeda, H Yokoyama, K Kumakura, ...
Journal of crystal growth 382, 36-40, 2013
48 2013 Nitride semiconductor stack and its semiconductor device T Makimoto, K Kumakura, N Kobayashi
US Patent 6,667,498, 2003
48 2003 