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Soo Ho Choi
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Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
JS Lee, SH Choi, SJ Yun, YI Kim, S Boandoh, JH Park, BG Shin, H Ko, ...
Science 362 (6416), 817-821, 2018
4612018
Large-scale synthesis of graphene and other 2D materials towards industrialization
SH Choi, SJ Yun, YS Won, CS Oh, SM Kim, KK Kim, YH Lee
Nature Communications 13 (1), 1484, 2022
2652022
Large-area monolayer hexagonal boron nitride on Pt foil
JH Park, JC Park, SJ Yun, H Kim, DH Luong, SM Kim, SH Choi, W Yang, ...
ACS nano 8 (8), 8520-8528, 2014
2632014
Layer-number-dependent work function of MoS2 nanoflakes
SH Choi, Z Shaolin, W Yang
Journal of the Korean Physical Society 64, 1550-1555, 2014
2492014
NOx gas sensors based on layer-transferred n-MoS2/p-GaN heterojunction at room temperature: study of UV light illuminations and humidity
M Reddeppa, BG Park, G Murali, SH Choi, ND Chinh, D Kim, W Yang, ...
Sensors and Actuators B: Chemical 308, 127700, 2020
1152020
Tip‐Induced Nano‐Engineering of Strain, Bandgap, and Exciton Funneling in 2D Semiconductors
Y Koo, Y Kim, SH Choi, H Lee, J Choi, DY Lee, M Kang, HS Lee, KK Kim, ...
Advanced Materials 33 (17), 2008234, 2021
862021
Epitaxial single‐crystal growth of transition metal dichalcogenide monolayers via the atomic sawtooth Au surface
SH Choi, HJ Kim, B Song, YI Kim, G Han, HTT Nguyen, H Ko, S Boandoh, ...
Advanced Materials 33 (15), 2006601, 2021
832021
A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics
S Boandoh, SH Choi, JH Park, SY Park, S Bang, MS Jeong, JS Lee, ...
Small 13 (39), 1701306, 2017
652017
Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer
A Mondal, C Biswas, S Park, W Cha, SH Kang, M Yoon, SH Choi, KK Kim, ...
Nature Nanotechnology 19 (1), 34-43, 2024
612024
Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications
B Kirubasankar, YS Won, LA Adofo, SH Choi, SM Kim, KK Kim
Chemical Science 13 (26), 7707-7738, 2022
482022
Drift-dominant exciton funneling and trion conversion in 2D semiconductors on the nanogap
H Lee, Y Koo, J Choi, S Kumar, HT Lee, G Ji, SH Choi, M Kang, KK Kim, ...
Science advances 8 (5), eabm5236, 2022
422022
Water-assisted synthesis of molybdenum disulfide film with single organic liquid precursor
SH Choi, B Stephen, JH Park, JS Lee, SM Kim, W Yang, KK Kim
Scientific reports 7 (1), 1983, 2017
422017
Synthesis of large-area tungsten disulfide films on pre-reduced tungsten suboxide substrates
SH Choi, S Boandoh, YH Lee, JS Lee, JH Park, SM Kim, W Yang, KK Kim
ACS applied materials & interfaces 9 (49), 43021-43029, 2017
352017
Room-Temperature Ferromagnetic Ultrathin α-MoO3:Te Nanoflakes
DJ Lee, Y Lee, YH Kwon, SH Choi, W Yang, DY Kim, S Lee
ACS nano 13 (8), 8717-8724, 2019
332019
Facile enhancement of photocatalytic efficiency of g-C3N4 by Li-intercalation
W Zhang, Z Zhang, SH Choi, W Yang
Catalysis Today 321, 67-73, 2019
322019
Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor deposition
JH Park, SH Choi, J Zhao, S Song, W Yang, SM Kim, KK Kim, YH Lee
Current Applied Physics 16 (9), 1229-1235, 2016
322016
1T’ RexMo1−xS2–2H MoS2 Lateral Heterojunction for Enhanced Hydrogen Evolution Reaction Performance
HTT Nguyen, LA Adofo, SH Yang, HJ Kim, SH Choi, B Kirubasankar, ...
Advanced Functional Materials 33 (3), 2209572, 2023
302023
Substitutional Vanadium Sulfide Nanodispersed in MoS2 Film for Pt‐Scalable Catalyst
FOT Agyapong‐Fordjour, SJ Yun, HJ Kim, W Choi, B Kirubasankar, ...
Advanced Science 8 (16), 2003709, 2021
292021
Electrical role of sulfur vacancies in MoS2: Transient current approach
J Lee, MJ Kim, BG Jeong, C Kwon, Y Cha, SH Choi, KK Kim, MS Jeong
Applied Surface Science 613, 155900, 2023
232023
One-Dimensional Single-Chain Nb2Se9 as Efficient Electrocatalyst for Hydrogen Evolution Reaction
FOT Agyapong-Fordjour, S Oh, J Lee, S Chae, KH Choi, SH Choi, ...
ACS Applied Energy Materials 2 (8), 5785-5792, 2019
222019
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