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Robert Kaplar
Robert Kaplar
Adresse e-mail validée de sandia.gov
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
14212018
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
2342004
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016
1742016
An AlN/Al0. 85Ga0. 15N high electron mobility transistor
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 2016
1542016
Vertical GaN power diodes with a bilayer edge termination
JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
1362015
Deep levels in p-type InGaAsN lattice matched to GaAs
D Kwon, RJ Kaplar, SA Ringel, AA Allerman, SR Kurtz, ED Jones
Applied physics letters 74 (19), 2830-2832, 1999
1051999
High voltage and high current density vertical GaN power diodes
AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ...
Electronics Letters 52 (13), 1170-1171, 2016
1002016
Ultrawide-bandgap semiconductors: An overview
MH Wong, O Bierwagen, RJ Kaplar, H Umezawa
Journal of Materials Research 36 (23), 4601-4615, 2021
882021
Deep levels in p-and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
RJ Kaplar, D Kwon, SA Ringel, AA Allerman, SR Kurtz, ED Jones, ...
Solar energy materials and solar cells 69 (1), 85-91, 2001
792001
Ultrawide bandgap semiconductors
M Higashiwaki, R Kaplar, J Pernot, H Zhao
Applied Physics Letters 118 (20), 2021
772021
Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein, AA Allerman, EA Douglas, RJ Kaplar
Journal of Vacuum Science & Technology A 38 (2), 2020
752020
Ohmic contacts to Al‐rich AlGaN heterostructures
EA Douglas, S Reza, C Sanchez, D Koleske, A Allerman, B Klein, ...
physica status solidi (a) 214 (8), 1600842, 2017
722017
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
AG Baca, BA Klein, JR Wendt, SM Lepkowski, CD Nordquist, ...
IEEE Electron Device Letters 40 (1), 17-20, 2018
692018
Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials
RJ Kaplar, JC Neely, DL Huber, LJ Rashkin
IEEE Power Electronics Magazine 4 (1), 36-42, 2017
682017
Analysis of 2D transport and performance characteristics for lateral power devices based on AlGaN alloys
ME Coltrin, AG Baca, RJ Kaplar
ECS Journal of Solid State Science and Technology 6 (11), S3114, 2017
622017
Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices
ME Coltrin, RJ Kaplar
Journal of Applied Physics 121 (5), 2017
612017
Slow detrapping transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs
S DasGupta, M Sun, A Armstrong, RJ Kaplar, MJ Marinella, JB Stanley, ...
IEEE transactions on electron devices 59 (8), 2115-2122, 2012
612012
Characterization and reliability of SiC-and GaN-based power transistors for renewable energy applications
RJ Kaplar, MJ Marinella, S DasGupta, MA Smith, S Atcitty, M Sun, ...
2012 IEEE Energytech, 1-6, 2012
582012
Deep levels and their impact on generation current in Sn-doped InGaAsN
RJ Kaplar, AR Arehart, SA Ringel, AA Allerman, RM Sieg, SR Kurtz
Journal of Applied Physics 90 (7), 3405-3408, 2001
582001
Al0. 85Ga0. 15N/Al0. 70Ga0. 30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature
AG Baca, BA Klein, AA Allerman, AM Armstrong, EA Douglas, ...
ECS Journal of Solid State Science and Technology 6 (12), Q161, 2017
542017
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