Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors V Gaddam, D Das, S Jeon
IEEE Transactions on Electron Devices 67 (2), 745-750, 2020
112 2020 Scalable fabrication of highly sensitive flexible temperature sensors based on silver nanoparticles coated reduced graphene oxide nanocomposite thin films N Neella, V Gaddam, MM Nayak, NS Dinesh, K Rajanna
Sensors and Actuators A: Physical 268, 173-182, 2017
62 2017 Morphology controlled synthesis of Al doped ZnO nanosheets on Al alloy substrate by low-temperature solution growth method V Gaddam, RR Kumar, M Parmar, GRK Yaddanapudi, MM Nayak, ...
RSC Advances 5 (18), 13519-13524, 2015
55 2015 A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology M Jung, V Gaddam, S Jeon
Nano Convergence 9 (1), 44, 2022
54 2022 Demonstration of High Ferroelectricity (P2 ) in Zr Rich Hfx Zr1–x O2 Films D Das, V Gaddam, S Jeon
IEEE Electron Device Letters 41 (1), 34-37, 2019
50 2019 Ferroelectricity Enhancement in Hf0.5 Zr0.5 O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process V Gaddam, D Das, T Jung, S Jeon
IEEE Electron Device Letters 42 (6), 812-815, 2021
49 2021 Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich Hfₓ Zr₁₋ₓ O₂Capacitors D Das, B Buyantogtokh, V Gaddam, S Jeon
IEEE Transactions on Electron Devices 68 (4), 1996-2002, 2021
44 2021 Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-x O₂ Capacitors D Das, V Gaddam, S Jeon
IEEE Electron Device Letters 42 (3), 331-334, 2021
38 2021 Synthesis of ZnO nanorods on a flexible Phynox alloy substrate: influence of growth temperature on their properties V Gaddam, RR Kumar, M Parmar, MM Nayak, K Rajanna
RSC advances 5 (109), 89985-89992, 2015
38 2015 Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2 /HZO) Bilayer Heterostructures and High … V Gaddam, G Kim, T Kim, M Jung, C Kim, S Jeon
ACS Applied Materials & Interfaces 14 (38), 43463-43473, 2022
27 2022 Sub 5 Å-EOT Hfₓ Zr1–x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid … D Das, B Buyantogtokh, V Gaddam, S Jeon
IEEE Transactions on Electron Devices 69 (1), 103-108, 2021
25 2021 Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors B Buyantogtokh, V Gaddam, S Jeon
Journal of Applied Physics 129 (24), 2021
23 2021 Low temperature VLS growth of ITO nanowires by electron beam evaporation method RR Kumar, V Gaddam, KN Rao, K Rajanna
Materials research express 1 (3), 035008, 2014
22 2014 Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system D Das, T Kim, V Gaddam, C Shin, S Jeon
Solid-State Electronics 174, 107914, 2020
18 2020 Development of a novel acoustic sensor using sputtered ZnO thin film MN Suma, MVN Prasad, V Gaddam, K Rajanna, M Nayak
J. Pure Appl. Ind. Phys 9 (1), 1-7, 2019
18 2019 Highly flexible and sensitive graphene-silver nanocomposite strain sensor N Neella, V Gaddam, K Rajanna, MM Nayak, T Srinivas
2015 IEEE SENSORS, 1-4, 2015
15 2015 A method of controlling the imprint effect in hafnia ferroelectric device H Shin, V Gaddam, Y Goh, Y Jeong, G Kim, Y Qin, S Jeon
Applied Physics Letters 122 (2), 2023
14 2023 Screen printed rGO-pd nana-composite films on a flexible substrate as temperature sensor S Nuthalapati, V Kedambaimoole, V Shirhatti, N Neella, V Gaddam, ...
2018 3rd International Conference for Convergence in Technology (I2CT), 1-4, 2018
13 2018 Negative temperature coefficient behavior of graphene-silver nanocomposite films for temperature sensor applications N Neella, V Gaddam, K Rajanna, MM Nayak
2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and …, 2016
13 2016 A novel piezoelectric ZnO nanogenerator on flexible metal alloy substrate V Gaddam, S Joshi, M Parmar, K Rajanna, MM Nayak
Proc. IEEE Sens., 2012, 1870-1873, 2012
13 2012 
Sanghun JeonProfessor at KAISTAdresse e-mail validée de kaist.ac.kr
