| Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer BY Kim, HW Park, SD Hyun, YB Lee, SH Lee, M Oh, SK Ryoo, IS Lee, ... Advanced Electronic Materials 8 (6), 2100042, 2022 | 44 | 2022 |
| Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm SK Ryoo, KD Kim, HW Park, YB Lee, SH Lee, IS Lee, S Byun, D Shim, ... Advanced Electronic Materials 8 (11), 2200726, 2022 | 35 | 2022 |
| Evolution of the ferroelectric properties of AlScN film by electrical cycling with an inhomogeneous field distribution KD Kim, YB Lee, SH Lee, IS Lee, SK Ryoo, S Byun, JH Lee, H Kim, ... Advanced Electronic Materials 9 (5), 2201142, 2023 | 31 | 2023 |
| Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film YB Lee, BY Kim, HW Park, SH Lee, M Oh, SK Ryoo, IS Lee, S Byun, ... Advanced Electronic Materials 8 (11), 2200310, 2022 | 29 | 2022 |
| Impact of operation voltage and NH 3 annealing on the fatigue characteristics of ferroelectric AlScN thin films grown by sputtering K Do Kim, YB Lee, SH Lee, IS Lee, SK Ryoo, SY Byun, JH Lee, ... Nanoscale 15 (40), 16390-16402, 2023 | 11 | 2023 |
| Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3‐Hf0.5Zr0.5O2‐Al2O3 Triple‐Layer Structure HW Park, M Oh, IS Lee, S Byun, YH Jang, YB Lee, BY Kim, SH Lee, ... Advanced Functional Materials 33 (9), 2206637, 2023 | 9 | 2023 |
| Improved ferroelectricity in Hf0. 5Zr0. 5O2 by inserting an upper HfOxNy interfacial layer BY Kim, SH Kim, HW Park, YB Lee, SH Lee, M Oh, SK Ryoo, IS Lee, ... Applied Physics Letters 119 (12), 2021 | 9 | 2021 |
| Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors BY Kim, IS Lee, HW Park, YB Lee, SH Lee, M Oh, SK Ryoo, SR Byun, ... Advanced Materials Technologies 8 (16), 2300146, 2023 | 8 | 2023 |
| Influences of the inhomogeneity of the ferroelectric thin films on switching current K Do Kim, YB Lee, SH Lee, IS Lee, SK Ryoo, S Byun, JH Lee, H Kim, ... MRS Communications 13 (5), 825-833, 2023 | 7 | 2023 |
| Exploring the Physical Origin of the Negative Capacitance Effect in a Metal–Ferroelectric–Metal–Dielectric Structure HW Park, S Byun, KD Kim, SK Ryoo, IS Lee, YB Lee, SH Lee, HW Nam, ... Advanced Functional Materials 33 (51), 2304754, 2023 | 6 | 2023 |
| Atomic layer deposition of HfN x films and improving the film performance by annealing under NH 3 atmosphere SK Ryoo, BY Kim, YB Lee, HW Park, SH Lee, M Oh, IS Lee, SY Byun, ... Journal of Materials Chemistry C 11 (24), 8018-8026, 2023 | 4 | 2023 |
| Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks JW Jeon, B Park, YH Jang, SH Lee, S Jeon, J Han, SK Ryoo, KD Kim, ... ACS Applied Materials & Interfaces 16 (12), 15032-15042, 2024 | 3 | 2024 |
| Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode SK Ryoo, KD Kim, W Choi, P Sriboriboon, S Heo, H Seo, YH Jang, ... Advanced Materials 37 (1), 2413295, 2025 | 1 | 2025 |
| Optimization of the 4 nm-Thick Hf1–xZrxO2 Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory HS Park, S Choi, KD Kim, MK Yeom, SH Lee, SK Ryoo, CS Hwang ACS Applied Electronic Materials 6 (9), 6826-6836, 2024 | 1 | 2024 |
| Memristive Crossbar Array‐Based Probabilistic Graph Modeling YH Jang, SH Lee, J Han, S Cheong, SK Shim, JK Han, SK Ryoo, ... Advanced Materials 36 (36), 2403904, 2024 | 1 | 2024 |
| Comparative study on the stability of ferroelectric polarization of HfZrO2 and AlScN thin films over the depolarization effect KD Kim, SK Ryoo, HS Park, S Choi, TW Park, MK Yeom, CS Hwang Journal of Applied Physics 136 (2), 2024 | 1 | 2024 |
| Investigation of ferro-resistive switching mechanisms in TiN/Hf0. 5Zr0. 5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect SH Lee, HS Park, SJ Shin, IS Lee, SK Ryoo, S Byun, KD Kim, T Moon, ... Applied Physics Reviews 11 (4), 2024 | | 2024 |
| High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor SA Mun, YH Jang, J Han, SK Shim, S Kang, Y Lee, J Choi, S Cheong, ... ACS Applied Materials & Interfaces 16 (32), 42884-42893, 2024 | | 2024 |
| Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors (Adv. Mater. Technol. 16/2023) BY Kim, IS Lee, HW Park, YB Lee, SH Lee, M Oh, SK Ryoo, SR Byun, ... Advanced Materials Technologies 8 (16), 2370074, 2023 | | 2023 |
