| Committee machines—a universal method to deal with non-idealities in memristor-based neural networks D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ... Nature communications 11 (1), 4273, 2020 | 86 | 2020 |
| Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (11), 1652-1655, 2018 | 56 | 2018 |
| Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks ME Pereira, J Deuermeier, P Freitas, P Barquinha, W Zhang, R Martins, ... APL Materials 10 (1), 2022 | 41 | 2022 |
| Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019 | 35* | 2019 |
| Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... IEEE Electron Device Letters 40 (8), 1269-1272, 2019 | 35 | 2019 |
| Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... 2019 Symposium on VLSI Technology, T238-T239, 2019 | 34 | 2019 |
| Random-telegraph-noise-enabled true random number generator for hardware security J Brown, JF Zhang, B Zhou, M Mehedi, P Freitas, J Marsland, Z Ji Scientific reports 10 (1), 17210, 2020 | 30 | 2020 |
| GeSe-based ovonic threshold switching volatile true random number generator Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ... IEEE Electron Device Letters 41 (2), 228-231, 2019 | 27 | 2019 |
| The Over-Reset Phenomenon in Ta2O5RRAM Device Investigated by the RTN-Based Defect Probing Technique Z Chai, W Zhang, P Freitas, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (7), 955-958, 2018 | 19 | 2018 |
| Cycling induced metastable degradation in GeSe Ovonic threshold switching selector Z Chai, W Zhang, S Clima, F Hatem, R Degraeve, Q Diao, JF Zhang, ... IEEE Electron Device Letters 42 (10), 1448-1451, 2021 | 16 | 2021 |
| Stochastic computing based on volatile GeSe ovonic threshold switching selectors Z Chai, P Freitas, WD Zhang, F Hatem, R Degraeve, S Clima, JF Zhang, ... IEEE Electron Device Letters 41 (10), 1496-1499, 2020 | 4 | 2020 |
| New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors Z Hu, W Zhang, R Degraeve, D Garbin, Z Chai, N Saxena, P Freitas, ... IEEE Transactions on Electron Devices 70 (2), 812-818, 2022 | 3 | 2022 |
| Impact of RTN and variability on RRAM-based neural network P Freitas, Z Chai, W Zhang, JF Zhang, J Marsland 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 2 | 2020 |
| Simulation and programming strategies to mitigate device non-idealities in memristor based neuromorphic systems PNJF Freitas PQDT-Global, 2023 | 1 | 2023 |
| True random number generator based on switching probability of volatile GeXSe1-X ovonic threshold switching selectors Z Chai, P Freitas, W Zhang, JF Zhang, J Marsland 2021 IEEE 14th International Conference on ASIC (ASICON), 1-4, 2021 | 1 | 2021 |
| Relaxation in GeSe Ovonic Threshold Switching Device W Zhang, Z Chai, P Freitas, JF Zhang, J Marsland 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022 | | 2022 |
| Conductive bridging RAM devices inspired on solid-state biopolymer electrolytes PNJF Freitas PQDT-Global, 2016 | | 2016 |
Wei Dong ZhangProfessor of Nanoelectronics, Liverpool John Moores UniversityAdresse e-mail validée de ljmu.ac.uk
