| Strained silicon MOSFET technology JL Hoyt, HM Nayfeh, S Eguchi, I Aberg, G Xia, T Drake, EA Fitzgerald, ... Digest. International Electron Devices Meeting,, 23-26, 2002 | 389 | 2002 |
| Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics ML Swiggers, G Xia, JD Slinker, AA Gorodetsky, GG Malliaras, ... Applied Physics Letters 79 (9), 1300-1302, 2001 | 169 | 2001 |
| Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors GM Xia, JL Hoyt, M Canonico Journal of applied physics 101 (4), 2007 | 58 | 2007 |
| Strain dependence of Si–Ge interdiffusion in epitaxial Si∕ Si1− yGey∕ Si heterostructures on relaxed Si1− xGex substrates G Xia, OO Olubuyide, JL Hoyt, M Canonico Applied physics letters 88 (1), 2006 | 46 | 2006 |
| Gate leakage suppression and breakdown voltage enhancement in p-GaN HEMTs using metal/graphene gates G Zhou, Z Wan, G Yang, Y Jiang, R Sokolovskij, H Yu, G Xia IEEE Transactions on Electron Devices 67 (3), 875-880, 2020 | 40 | 2020 |
| Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors CH Dai, TC Chang, AK Chu, YJ Kuo, SH Ho, TY Hsieh, WH Lo, CE Chen, ... Applied Physics Letters 99 (1), 2011 | 37 | 2011 |
| High-performance nMOSFET with in-situ phosphorus-doped embedded Si: C (ISPD eSi: C) source-drain stressor BF Yang, R Takalkar, Z Ren, L Black, A Dube, JW Weijtmans, J Li, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 35 | 2008 |
| Fabrication and the interlayer coupling effect of twisted stacked black phosphorus for optical applications T Fang, T Liu, Z Jiang, R Yang, P Servati, G Xia ACS Applied Nano Materials 2 (5), 3138-3145, 2019 | 32 | 2019 |
| High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ... 2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012 | 32 | 2012 |
| On the origin of hole valence band injection on GIFBE in PD SOI n-MOSFETs CH Dai, TC Chang, AK Chu, YJ Kuo, SC Chen, CC Tsai, SH Ho, WH Lo, ... IEEE Electron Device Letters 31 (6), 540-542, 2010 | 32 | 2010 |
| Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus W Luo, R Yang, J Liu, Y Zhao, W Zhu, GM Xia Nanotechnology 28 (28), 285301, 2017 | 31 | 2017 |
| Atomistic simulation of radiation damage to carbon nanotube FZ Cui, ZJ Chen, J Ma, GR Xia, Y Zhai Physics Letters A 295 (1), 55-59, 2002 | 31 | 2002 |
| A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range Y Dong, Y Lin, S Li, S McCoy, G Xia Journal of Applied Physics 111 (4), 2012 | 30 | 2012 |
| Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si n-channel MOSFETs G Xia, HM Nayfeh, ML Lee, EA Fitzgerald, DA Antoniadis, DH Anjum, J Li, ... IEEE transactions on electron devices 51 (12), 2136-2144, 2004 | 30 | 2004 |
| Stress engineering with silicon nitride stressors for Ge-on-Si lasers J Ke, L Chrostowski, G Xia IEEE Photonics Journal 9 (2), 1-15, 2017 | 28 | 2017 |
| Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors CH Dai, TC Chang, AK Chu, YJ Kuo, WH Lo, SH Ho, CE Chen, JM Shih, ... Applied Physics Letters 98 (9), 2011 | 25 | 2011 |
| On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs Z Ren, G Pei, J Li, BF Yang, R Takalkar, K Chan, G Xia, Z Zhu, A Madan, ... 2008 Symposium on VLSI Technology, 172-173, 2008 | 25 | 2008 |
| p-GaN gate HEMTs with 10.6 V maximum gate drive voltages by Mg doping engineering G Zhou, F Zeng, R Gao, Q Wang, K Cheng, L Li, P Xiang, F Du, G Xia, ... IEEE Transactions on Electron Devices 69 (5), 2282-2286, 2022 | 23 | 2022 |
| Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers J Wu, S Lei, WC Cheng, R Sokolovskij, Q Wang, GM Xia, H Yu Journal of Vacuum Science & Technology A 37 (6), 2019 | 23 | 2019 |
| On the origin of gate-induced floating-body effect in PD SOI p-MOSFETs CH Dai, TC Chang, AK Chu, YJ Kuo, FY Jian, WH Lo, SH Ho, CE Chen, ... IEEE electron device letters 32 (7), 847-849, 2011 | 23 | 2011 |