| Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N R Guido, PD Lomenzo, MR Islam, N Wolff, M Gremmel, G Schönweger, ... ACS Applied Materials & Interfaces 15 (5), 7030-7043, 2023 | 37 | 2023 |
| Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing T Stecconi, R Guido, L Berchialla, A La Porta, J Weiss, Y Popoff, M Halter, ... Advanced electronic materials 8 (10), 2200448, 2022 | 31 | 2022 |
| Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2 PD Lomenzo, L Collins, R Ganser, B Xu, R Guido, A Gruverman, A Kersch, ... Advanced Functional Materials 33 (41), 2303636, 2023 | 22 | 2023 |
| Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching R Guido, T Mikolajick, U Schroeder, PD Lomenzo Nano Letters 23 (15), 7213-7220, 2023 | 17 | 2023 |
| Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors R Guido, H Lu, PD Lomenzo, T Mikolajick, A Gruverman, U Schroeder Advanced Science 11 (16), 2308797, 2024 | 6 | 2024 |
| The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2 Capacitors R Alcala, PD Lomenzo, T Mittmann, B Xu, R Guido, S Lancaster, ... 2022 International Electron Devices Meeting (IEDM), 32.8. 1-32.8. 4, 2022 | 6 | 2022 |
| Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors S Vecchi, FM Puglisi, P Appelt, R Guido, X Wang, S Slesazeck, ... Advanced Electronic Materials, 2400204, 2024 | 2 | 2024 |
| Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM T Stecconi, Y Popoff, R Guido, D Falcone, M Halter, M Sousa, F Horst, ... ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 2 | 2022 |
| Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states T Stecconi, Y Popoff, R Guido, M Halter, D Falcone, A La Porta, F Horst, ... 2022 Device Research Conference (DRC), 1-2, 2022 | 2 | 2022 |
| A CMOS-compatible bipolar analogue switching redox-based ReRAM with TaOx/HfO2 bilayer R Guido Politecnico di Torino, 2021 | 1 | 2021 |
| Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study O Rehm, L Baumgarten, R Guido, PM Düring, A Gloskovskii, C Schlueter, ... physica status solidi (RRL)–Rapid Research Letters, 2400307, 2024 | | 2024 |
| Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics R Guido, X Wang, B Xu, R Alcala, T Mikolajick, U Schroeder, PD Lomenzo ACS Applied Materials & Interfaces 16 (32), 42415-42425, 2024 | | 2024 |
| Filamentary-based TaOx/HfO2 memristive synapses T Stecconi, Y Popoff, DF Falcone, R Guido, A La Porta, F Horst, BJ Offrein, ... European Materials Research Society (e-MRS) Spring Meeting, 2022 | | 2022 |
| Scalable Conductive Metal-Oxide/HfO2-Based Bilayer ReRAMs for Analog In-Memory Computing T Stecconi, Y Popoff, DF Falcone, R Guido, A La Porta, F Horst, ... Materials Research Society (MRS) Spring Meeting, 2022 | | 2022 |