Gerard Ghibaudo

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Cristoloveanu, SorinGrenoble INPAdresse e-mail validée de grenoble-inp.fr
barbara de salvoCEA LETIAdresse e-mail validée de cea.fr
Babis DimitriadisDepartment of Physics Aristotle University of Thessaloniki, 54124, GreeceAdresse e-mail validée de physics.auth.gr
Frederic BoeufSTMicroelectronicsAdresse e-mail validée de st.com
Christoforos THEODOROUIMEP-LAHC, Minatec, Grenoble INPAdresse e-mail validée de minatec.inpg.fr
Sylvain BARRAUDCEA-LETI, Minatec CampusAdresse e-mail validée de cea.fr
Quentin RafhayUniversité Grenoble AlpesAdresse e-mail validée de phelma.grenoble-inp.fr
Jan A. ChroboczekINPGAdresse e-mail validée de enserg.fr
Francois AndrieuCEA LETIAdresse e-mail validée de cea.fr
ANDREAS TSORMPATZOGLOUDepartment of Informatics and Telecommunications, University of Ioannina, Arta, GreeceAdresse e-mail validée de uoi.gr
Maud VinetQuobly (ex CEA)Adresse e-mail validée de quobly.io
Yong XuNanjing University of Posts and TelecommunicationsAdresse e-mail validée de njupt.edu.cn
Dimitrios TassisAristotle University of ThessalonikiAdresse e-mail validée de auth.gr
Dae-Young JeonDepartment of Electrical Engineering, Gyeongsang National University, South KoreaAdresse e-mail validée de gnu.ac.kr
elisa vianelloScientist, CEA LetiAdresse e-mail validée de cea.fr
Thierry BaronCNRS, Université Grenoble AlpesAdresse e-mail validée de cea.fr
Vincent DelayeCEA, LETI, MINATEC CampusAdresse e-mail validée de cea.fr
Laurent MONTESGrenoble INP, PHELMA, IMEP-LahcAdresse e-mail validée de grenoble-inp.fr
Remi CoquandAdvanced devices Engineer, PhDAdresse e-mail validée de cea.fr
Takeo MinariNational Institute for Materials Science (NIMS)Adresse e-mail validée de nims.go.jp

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Gerard Ghibaudo

IMEP-LAHC, Minatec-INP Grenoble

Adresse e-mail validée de minatec.inpg.fr - Page d'accueil

Semiconductor devices


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
A new method for the extraction of MOSFET parameters G Ghibaudo Electronics letters 24, 543-544, 1988	975	1988
Improved analysis of low frequency noise in field‐effect MOS transistors G Ghibaudo, O Roux, C Nguyen‐Duc, F Balestra, J Brini physica status solidi (a) 124 (2), 571-581, 1991	867	1991
Review on high-k dielectrics reliability issues G Ribes, J Mitard, M Denais, S Bruyere, F Monsieur, C Parthasarathy, ... IEEE Transactions on Device and materials Reliability 5 (1), 5-19, 2005	679	2005
Electrical noise and RTS fluctuations in advanced CMOS devices G Ghibaudo, T Boutchacha Microelectronics Reliability 42 (4-5), 573-582, 2002	426	2002
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009	343	2009
Ultimately thin double-gate SOI MOSFETs T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ... IEEE transactions on electron devices 50 (3), 830-838, 2003	302	2003
HfO₂-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015	233	2015
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo Journal of Applied Physics 107 (11), 2010	233	2010
15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET C Dupré, A Hubert, S Becu, M Jublot, V Maffini-Alvaro, C Vizioz, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	192	2008
Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs K Romanjek, F Andrieu, T Ernst, G Ghibaudo IEEE Electron Device Letters 25 (8), 583-585, 2004	189	2004
Ionizing radiation induced leakage current on ultra-thin gate oxides A Scarpa, A Paccagnella, F Montera, G Ghibaudo, G Pananakakis, ... IEEE Transactions on Nuclear Science 44 (6), 1818-1825, 1997	188	1997
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ... IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001	178	2001
Device and circuit cryogenic operation for low temperature electronics F Balestra, G Ghibaudo Kluwer Academic Publishers, 2001	168	2001
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo Solid-State Electronics 51 (2), 239-244, 2007	160	2007
3DVLSI with CoolCube process: An alternative path to scaling P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ... 2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015	157	2015
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment F Monsieur, E Vincent, D Roy, S Bruyere, JC Vildeuil, G Pananakakis, ... 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th …, 2002	155	2002
Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures G Pananakakis, G Ghibaudo, R Kies, C Papadas Journal of Applied Physics 78 (4), 2635-2641, 1995	149	1995
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ... 2006 International Electron Devices Meeting, 1-4, 2006	148	2006
75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ... Digest. International Electron Devices Meeting,, 355-358, 2002	146	2002
Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow A Fargeix, G Ghibaudo Journal of applied physics 54 (12), 7153-7158, 1983	146	1983

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