Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
411 2018 Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
336 2017 High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ...
Applied Physics Letters 110 (22), 2017
271 2017 Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 2018
187 2018 Delta-doped β-gallium oxide field-effect transistor S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan
Applied Physics Express 10 (5), 051102, 2017
175 2017 2 O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHzZ Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
171 2019 Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
168 2018 Delta Doped Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
158 2018 Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
148 2019 Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2 O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
121 2020 Trapping effects in Si δ-doped β-Ga2O3 MESFETs on an Fe-doped β-Ga2O3 substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
115 2018 Breakdown Characteristics of 0.22 Ga0.78 )2 O3 /Ga2 O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
114 2019 Evaluation of Low-Temperature Saturation Velocity in x Ga1–x )2 O3 /Ga2 O3 Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
101 2019 High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ...
Journal of Applied Physics 127 (21), 2020
100 2020 β-(Al0.18 Ga0.82 )2 O3 /Ga2 O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ...
IEEE Electron Device Letters 42 (6), 899-902, 2021
90 2021 Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector AS Pratiyush, S Krishnamoorthy, S Kumar, Z Xia, R Muralidharan, ...
Japanese Journal of Applied Physics 57 (6), 060313, 2018
88 2018 Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 2018
77 2018 Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ...
Applied Physics Letters 115 (15), 2019
72 2019 MBE-Grown2 O3 -Based Schottky UV-C Photodetectors With Rectification Ratio ~107 AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ...
IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018
66 2018 Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
63 2020 
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityAdresse e-mail validée de ece.osu.edu
