| Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties J Casamento, H Lee, T Maeda, V Gund, K Nomoto, L van Deurzen, ... Applied Physics Letters 120 (15), 2022 | 48 | 2022 |
| Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look K Lee, S Bharadwaj, YT Shao, L van Deurzen, V Protasenko, DA Muller, ... Applied Physics Letters 117 (6), 2020 | 18 | 2020 |
| Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors L van Deurzen, TS Nguyen, J Casamento, HG Xing, D Jena Applied Physics Letters 123 (24), 2023 | 13 | 2023 |
| Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates J Singhal, J Encomendero, Y Cho, L van Deurzen, Z Zhang, K Nomoto, ... AIP Advances 12 (9), 2022 | 13 | 2022 |
| Bottom tunnel junction blue light-emitting field-effect transistors S Bharadwaj, K Lee, K Nomoto, A Hickman, L van Deurzen, V Protasenko, ... Applied Physics Letters 117 (3), 2020 | 13 | 2020 |
| Dephasing by optical phonons in GaN defect single-photon emitters Y Geng, J Luo, L van Deurzen, H Xing, D Jena, GD Fuchs, F Rana Scientific Reports 13 (1), 8678, 2023 | 12 | 2023 |
| Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy L van Deurzen, R Page, V Protasenko, K Nomoto, HG Xing, D Jena AIP Advances 12 (3), 2022 | 12* | 2022 |
| Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs L van Deurzen, MG Ruiz, K Lee, H Turski, S Bharadwaj, R Page, ... Journal of Physics D: Applied Physics 54 (49), 495106, 2021 | 10 | 2021 |
| Using both faces of polar semiconductor wafers for functional devices L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... Nature 634 (8033), 334-340, 2024 | 5 | 2024 |
| Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy GA Alvarez, J Casamento, L van Deurzen, MI Khan, K Khan, E Jeong, ... Materials Research Letters 11 (12), 1048-1054, 2023 | 5 | 2023 |
| Growth kinetics and substrate stability during high- temperature molecular beam epitaxy of AlN nanowires Philipp Maximilian John, Mikel Gómez Ruiz, Len van Deurzen, Jonas Lähnemann ... Nanotechnology 34, 465605, 2023 | 5 | 2023 |
| Excitonic and deel-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski ... APL Materials 11 (8), 081109, 2023 | 5 | 2023 |
| Enhanced efficiency in bottom tunnel junction InGaN blue LEDs L van Deurzen, S Bharadwaj, K Lee, V Protasenko, H Turski, HG Xing, ... Light-Emitting Devices, Materials, and Applications XXV 11706, 30-35, 2021 | 3 | 2021 |
| Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates S Agrawal, L van Deurzen, J Encomendero, JE Dill, H Wei Sheena Huang, ... Applied Physics Letters 124 (10), 2024 | 1 | 2024 |
| Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters Y Geng, J Luo, L van Deurzen, D Jena, GD Fuchs, F Rana arXiv preprint arXiv:2206.12636, 2022 | 1 | 2022 |
| Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures CP Savant, A Verma, TS Nguyen, L van Deurzen, YH Chen, Z He, ... APL Materials 12 (11), 2024 | | 2024 |
| Publisher Correction: Using both faces of polar semiconductor wafers for functional devices L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... Nature, 1-1, 2024 | | 2024 |
| Dualtronics: leveraging both faces of polar semiconductors L van Deurzen, E Kim, N Pieczulewski, Z Zhang, A Feduniewicz-Zmuda, ... arXiv preprint arXiv:2404.03733, 2024 | | 2024 |
| Ultrawide Bandgap Nitride Photonics on Bulk Substrates LH van Deurzen Cornell University, 2024 | | 2024 |
| Bottom tunnel junction light-emitting field-effect transistors S Bharadwaj, K Lee, K Nomoto, A Hickman, L Van Deurzen, HG Xing, ... US Patent App. 18/016,334, 2023 | | 2023 |
Debdeep JenaCornell UniversityAdresse e-mail validée de cornell.edu
