A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
2735 2018 Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
248 2019 2300V reverse breakdown voltage Ga2O3 Schottky rectifiers J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 7 (5), Q92, 2018
237 2018 High Breakdown Voltage (−201) J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata
IEEE Electron Device Letters 38 (7), 906-909, 2017
230 2017 High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
209 2017 Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ...
Applied Physics Letters 112 (3), 2018
136 2018 Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ...
Applied Physics Letters 113 (9), 2018
109 2018 Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW. cm-2 figure-of-merit J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
AIP Advances 8 (5), 2018
94 2018 Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length J Lee, E Flitsiyan, L Chernyak, J Yang, F Ren, SJ Pearton, B Meyler, ...
Applied Physics Letters 112 (8), 2018
90 2018 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers J Yang, F Ren, SJ Pearton, G Yang, J Kim, A Kuramata
Journal of Vacuum Science & Technology B 35 (3), 2017
89 2017 Effect of surface treatments on electrical properties of β-Ga2O3 J Yang, Z Sparks, F Ren, SJ Pearton, M Tadjer
Journal of Vacuum Science & Technology B 36 (6), 2018
85 2018 A comparative study of wet etching and contacts on (2¯ 01) and (010) oriented β-Ga2O3 S Jang, S Jung, K Beers, J Yang, F Ren, A Kuramata, SJ Pearton, KH Baik
Journal of Alloys and Compounds 731, 118-125, 2018
80 2018 Annealing of dry etch damage in metallized and bare (-201) Ga2O3 J Yang, F Ren, R Khanna, K Bevlin, D Geerpuram, LC Tung, J Lin, ...
Journal of Vacuum Science & Technology B 35 (5), 2017
78 2017 Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ...
Applied Physics Letters 110 (14), 2017
76 2017 Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, A Kuramata, ...
Journal of Vacuum Science & Technology B 35 (6), 2017
71 2017 Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ...
Applied physics letters 114 (23), 2019
70 2019 Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current EB Yakimov, AY Polyakov, NB Smirnov, IV Shchemerov, J Yang, F Ren, ...
Journal of Applied Physics 123 (18), 2018
66 2018 Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, S Jang, A Kuramata, ...
AIP Advances 7 (9), 2017
63 2017 Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers J Yang, C Fares, R Elhassani, M Xian, F Ren, SJ Pearton, M Tadjer, ...
ECS Journal of Solid State Science and Technology 8 (7), Q3159, 2019
60 2019 10 MeV proton damage in β-Ga2O3 Schottky rectifiers J Yang, Z Chen, F Ren, SJ Pearton, G Yang, J Kim, J Lee, E Flitsiyan, ...
Journal of Vacuum Science & Technology B 36 (1), 2018
59 2018 
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaAdresse e-mail validée de mse.ufl.edu