Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled M Sugawara, K Mukai, Y Nakata, H Ishikawa, A Sakamoto
Physical Review B 61 (11), 7595, 2000
385 2000 Quantum-dot semiconductor optical amplifiers T Akiyama, M Sugawara, Y Arakawa
Proceedings of the IEEE 95 (9), 1757-1766, 2007
308 2007 Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers M Sugawara, H Ebe, N Hatori, M Ishida, Y Arakawa, T Akiyama, K Otsubo, ...
Physical Review B 69 (23), 235332, 2004
296 2004 Self-assembled InGaAs quantum dots and quantum-dot lasers M SUGAWARA, K MUKAI, YM NAKATA
Quantum Optoelectronics, QMC4, 1999
279 1999 Theory of spontaneous-emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks M Sugawara
Physical Review B 51 (16), 10743, 1995
259 1995 Self-formed In0. 5Ga0. 5As quantum dots on GaAs substrates emitting at 1.3 µm K Mukai, N Ohtsuka, MSM Sugawara, SYS Yamazaki
Japanese journal of applied physics 33 (12A), L1710, 1994
259 1994 Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-µm p-doped quantum-dot lasers without current adjustments K Otsubo, N Hatori, M Ishida, S Okumura, T Akiyama, Y Nakata, H Ebe, ...
Japanese Journal of Applied Physics 43 (8B), L1124, 2004
250 2004 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA K Mukai, Y Nakata, K Otsubo, M Sugawara, N Yokoyama, H Ishikawa
IEEE Photonics Technology Letters 11 (10), 1205-1207, 1999
228 1999 An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots T Akiyama, M Ekawa, M Sugawara, K Kawaguchi, H Sudo, A Kuramata, ...
IEEE Photonics Technology Letters 17 (8), 1614-1616, 2005
221 2005 Effect of phonon bottleneck on quantum-dot laser performance M Sugawara, K Mukai, H Shoji
Applied physics letters 71 (19), 2791-2793, 1997
221 1997 Emission from discrete levels in self‐formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck K Mukai, N Ohtsuka, H Shoji, M Sugawara
Applied physics letters 68 (21), 3013-3015, 1996
206 1996 Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection H Shoji, K Mukai, N Ohtsuka, M Sugawara, T Uchida, H Ishikawa
IEEE Photonics Technology Letters 7 (12), 1385-1387, 1995
186 1995 Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕ GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection M Sugawara, N Hatori, H Ebe, M Ishida, Y Arakawa, T Akiyama, K Otsubo, ...
Journal of Applied Physics 97 (4), 2005
183 2005 Quantum-dot semiconductor optical amplifiers for high bit-rate signal processing over 40 Gbit/s M Sugawara, N Hatori, T Akiyama, Y Nakata, H Ishikawa
Japanese Journal of Applied Physics 40 (5B), L488, 2001
170 2001 Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices T Akiyama, H Kuwatsuka, T Simoyama, Y Nakata, K Mukai, M Sugawara, ...
IEEE Journal of Quantum Electronics 37 (8), 1059-1065, 2001
163 2001 Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers T Akiyama, H Kuwatsuka, N Hatori, Y Nakata, H Ebe, M Sugawara
IEEE Photonics Technology Letters 14 (8), 1139-1141, 2002
152 2002 Phonon bottleneck in self-formed K Mukai, N Ohtsuka, H Shoji, M Sugawara
Physical Review B 54 (8), R5243, 1996
152 1996 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots K Mukai, Y Nakata, K Otsubo, M Sugawara, N Yokoyama, H Ishikawa
IEEE Journal of Quantum Electronics 36 (4), 472-478, 2000
151 2000 Temperature dependent lasing characteristics of multi-stacked quantum dot lasers H Shoji, Y Nakata, K Mukai, Y Sugiyama, M Sugawara, N Yokoyama, ...
Applied physics letters 71 (2), 193-195, 1997
142 1997 Conduction-band and valence-band structures in strained M Sugawara, N Okazaki, T Fujii, S Yamazaki
Physical Review B 48 (11), 8102, 1993
118 1993 